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TC850ILW 数据表(PDF) 2 Page - TelCom Semiconductor, Inc

部件名 TC850ILW
功能描述  15-BIT, FAST-INTEGRATING CMOS ANALOG-TO-DIGITAL CONVERTER
Download  14 Pages
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制造商  TELCOM [TelCom Semiconductor, Inc]
网页  http://www.telcom-semi.com
标志 TELCOM - TelCom Semiconductor, Inc

TC850ILW 数据表(HTML) 2 Page - TelCom Semiconductor, Inc

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TELCOM SEMICONDUCTOR, INC.
ABSOLUTE MAXIMUM RATINGS*
Positive Supply Voltage (VDD to GND) ....................... +6V
Negative Supply Voltage (VSS to GND) .....................– 9V
Analog Input voltage (IN+ or IN) ..................... VDD to VSS
Voltage Reference Input
(REF1+, REF1–, REF2+) .............................. VDD to VSS
Logic Input Voltage ................ VDD + 0.3V to GND – 0.3V
Current Into Any Pin ................................................. 10mA
While Operating ................................................ 100
µA
Ambient Operating Temperature Range
C Device ................................................ 0
°C to +70°C
I Device ............................................. – 25
°C to +85°C
ELECTRICAL CHARACTERISTICS: VS = ±5V, fCLK = 61.44 kHz, VFS = 3.2768V, TA = 25°C, Fig. 1 Test Circuit,
unless otherwise specified.
Symbol Parameter
Test Conditions
Min
Typ
Max
Unit
Zero-Scale Error
VIN = 0V
±0.25
±0.5
LSB
End Point Linearity Error
–VFS ≤ VIN ≤ +VFS
±1
±2
LSB
Differential Nonlinearity
±0.1
±0.5
LSB
IIN
Input Leakage Current
VIN = 0V, TA = 25°C
30
75
pA
0
°C ≤ TA ≤ +70°C
———
– 25
° ≤ TA ≤ +85°C
1.1
3
nA
VCMR
Common-Mode Voltage Range
Over Operating Temperature Range
VSS + 1.5
VDD – 1.5
V
CMRR
Common-Mode Rejection Ratio
VIN = 0V, VCM = ±1V
80
dB
Full-Scale Gain Temperature
External Ref Temperature
Coefficient
Coefficient = 0 ppm/
°C
2
5
ppm/
°C
0
°C ≤ TA ≤ +70°C
Zero-Scale Error
VIN = 0V
0.3
2
µV/°C
Temperature Coefficient
0
°C ≤ TA ≤ +70°C
Full-Scale Magnitude
VIN = ±3.275V
0.5
2
LSB
Symmetry Error
eN
Input Noise
Not Exceeded 95% of Time
30
µVP-P
IS+
Positive Supply Current
2
3.5
mA
IS–
Negative Supply Current
2
3.5
mA
VOH
Output High Voltage
IO = 500 µA
3.5
4.9
V
VOL
Output Low Voltage
IO = 1.6 mA
0.15
0.4
V
IOP
Output Leakage Current
Pins 8 – 15, High-Impedance State
0.1
1
µA
VIH
Input High Voltage
Note 3
3.5
2.3
V
IL
Input Low Voltage
Note 3
2.1
1
V
IPU
Input Pull-Up Current
Pins 2, 3, 4, 6, 7; VIN = 0V
4
µA
IPD
Input Pull-Down Current
Pins 1, 5; VIN = 5V
14
µA
IOSC
Oscillator Output Current
Pin 18, VOUT = 2.5V
140
µA
CIN
Input Capacitance
Pins 1 – 7, 17
1
pF
COUT
Output Capacitance
Pins 8 – 15, High-Impedance State
15
pF
tCE
Chip-Enable Access Time
CS or CE, RD = LOW (Note 1)
230
450
nsec
tRE
Read-Enable Access Time
CS = HIGH, CE = LOW (Note 1)
190
450
nsec
tDHC
Data Hold From CS or CE
RD = LOW (Note 1)
250
450
nsec
tDHR
Data Hold From RD
CS = HIGH, CE = LOW (Note 1)
210
450
nsec
tOP
OVR/POL Data Access Time
CS = HIGH, CE = LOW, RD = LOW (Note 1)
140
300
nsec
Lead Temperature (Soldering, 10 sec) ................. +300
°C
Package Power Dissipation (TA ≤ 70°C)
CerDIP .............................................................. 2.29W
Plastic DIP ........................................................ 1.23W
Plastic PLCC .................................................... 1.23W
*Static-sensitive device. Unused devices must be stored in conductive
material. Protect devices from static discharge and static fields. Stresses
above those listed under Absolute Maximum Ratings may cause perma-
nent damage to the device. These are stress ratings only and functional
operation of the device at these or any other conditions above those
indicated in the operational sections of the specifications is not implied.
Exposure to Absolute Maximum Rating Conditions for extended periods
may affect device reliability.
15-BIT, FAST-INTEGRATING CMOS
ANALOG-TO-DIGITAL CONVERTER
TC850


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