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BA886 数据表(PDF) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
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BA886 数据表(HTML) 1 Page - Guangdong Kexin Industrial Co.,Ltd |
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1 / 1 page SMD Type www.kexin.com.cn 1 Diodes 0.4+0.1 -0.1 2.9+0.1 -0.1 0.95+0.1 -0.1 1.9+0.1 -0.1 1.Base 2.Emitter 3.collector 12 3 Unit: mm SOT-23 0.1+0.05 -0.01 Silicon PIN Diode BA886 Absolute M axim um Ratings T a = 25 Param eter Sym bol Value Unit Reverse Voltage VR 50 V Forward Current IF 50 m A O perating tem perature range Top -55to+125 Storage tem perature range Tstg -55to+150 Junction am bient RthJA 450 K/W Note: 1. Package m ounted on alum ina 15 m m 16.7 m m 0.7 mm. Electrical Characteristics Ta = 25 Param eter Sym bol Conditions Min Typ Max Unit Forward Voltage VF IF =50 m A 1.15 V Reverse Current IR VR = 50 V 50 nA VR = 50 V, f = 1 MHz 0.23 0.35 VR = 0 V,f=100 MHz 0.20 f = 100 MHz IF =10 A 2400 IF =1 m A 58 IF =10 m A 6.5 7.8 10 Zero bias conductance gp VR = 0 V,f= 100 MHz 40 S Series inductance LS 2nH pF Diode capacitance CT Forward resistance rf Marking Marking PC Features Current-controlled RF resistor for switching and attenuating applications Frequency range above 1 M Designed for low IM distortion |
类似零件编号 - BA886 |
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类似说明 - BA886 |
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