2SA1385-Z datasheet(1/1 Pages) KEXIN

部件名	2SA1385-Z

功能描述	Silicon PNP Epitaxia

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制造商	KEXIN [Guangdong Kexin Industrial Co.,Ltd]

网页	http://www.kexin.com.cn/index.asp

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SMD Type

Transistors

1

2.3

0.60+0.1

-0.1

6.50+0.15

-0.15

0.80+0.1

-0.1

4.60+0.15

-0.15

5.30+0.2

-0.2

2.30+0.1

-0.1

0.50+0.8

-0.7

0.127

max

TO-252

Unit: mm

Silicon PNP Epitaxia

2SA1385-Z

Features

Low VCE(sat):VCE(sat)=-0.18 V TYP.

Absolute Maximum Ratings Ta = 25

Parameter

Symbol

Rating

Unit

Collector-base voltage

VCBO

-60

V

Collector-emitter voltage

VCEO

-60

V

Emitter-base voltage

VEBO

-7

V

Collector current

IC

-5

A

Collector current pulse *

ICP

-7

A

Total power dissipation

PT

10

W

Junction temperature

Tj

150

Storage temperature

Tstg

-55to+150

*PW

10ms, duty cycle

50%.

Electrical Characteristics Ta = 25

Parameter

Symbol

Testconditons

Min

Typ

Max

Unit

Collector cut-off current

ICBO

VCB =-50 V, IE =0

-10

ìA

Emitter cut-off current

IEBO

VEB =-7V, IC =0

-10

ìA

DC current gain *

hFE

VCE =-1V, IC = -2 A

100

200

400

Collector-emitter saturation voltage *

VCE(sat) IC =-2A, IB =-0.2A

-0.18

-0.3

V

Base-emitter saturation voltage *

VBE(sat) IC =-2A, IB =-0.2A

-1.2

V

Gain bandwidth product

fT

VCE =-10 V, IC = -0.5 A

140

MHz

Turn-on time

ton

0.08

1.0

ìs

Storage time

tstg

0.55

2.5

ìs

Fall time

tf

0.18

1.0

ìs

*PW

350ìs, duty cycle

2%.

IC =-2A,IB1 =-IB2 =-0.2A, RL=50Ù,

VCC=-10V

1 Base

2 Collector

3 Emitter

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hFE Classification

Marking

M

L

K

hFE

100 200

160 320

200 400

类似零件编号 - 2SA1385-Z

制造商	部件名	数据表	功能描述
NEC	2SA1385-Z	235Kb / 4P	PNP SILICON EPITAXIAL TRANSISTOR MP-3
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类似零件编号 - 2SA1385-Z

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