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TC4425CPA 数据表(PDF) 7 Page - TelCom Semiconductor, Inc |
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TC4425CPA 数据表(HTML) 7 Page - TelCom Semiconductor, Inc |
7 / 7 page 4-243 TELCOM SEMICONDUCTOR, INC. 7 6 5 4 3 1 2 8 200 0 400 600 800 1000 1200 1400 020 40 60 80 100 120 140 AMBIENT TEMPERATURE ( °C) 8 Pin DIP 16 Pin SOIC 8 Pin CerDIP Thermal Derating Curves TC4423 Crossover Energy 10–9 8 10–8 02468 10 12 14 16 18 6 4 2 8 6 4 2 10–10 VIN NOTE: The values on this graph represent the loss seen by both drivers in a package during one complete cycle. For a single driver, divide the stated values by 2. For a single transition of a single driver, divide the stated value by 4. *Static-sensitive device. Unused devices must be stored in conductive material. Protect devices from static discharge and static fields. Stresses above those listed under Absolute Maximum Ratings (See page 2) may cause permanent damage to the device. These are stress ratings only and functional operation of the device at these or any other conditions above those indicated in the operational sections of the specifications is not implied. Exposure to Absolute Maximum Rating Conditions for extended periods may affect device reliability. 3A DUAL HIGH-SPEED MOSFET DRIVERS TC4423 TC4424 TC4425 |
类似零件编号 - TC4425CPA |
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类似说明 - TC4425CPA |
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