ST103S08PFN1P datasheet(2/9 Pages) VISHAY

部件名	ST103S08PFN1P

功能描述	Inverter Grade Thyristors (Stud Version), 105 A

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制造商	VISHAY [Vishay Siliconix]

网页	http://www.vishay.com

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Document Number: 94365

2

Revision: 29-Apr-08

ST103SP Series

Vishay High Power Products Inverter Grade Thyristors

(Stud Version), 105 A

CURRENT CARRYING CAPABILITY

FREQUENCY

UNITS

50 Hz

280

180

440

330

4730

3630

A

400 Hz

310

200

470

300

2500

1850

1000 Hz

320

200

480

310

1530

1090

2500 Hz

340

210

490

320

840

580

Recovery voltage Vr

50

V

Voltage before turn-on Vd

VDRM

Rise of on-state current dI/dt

50

-

A/µs

Case temperature

60

85

60

85

60

85

°C

Equivalent values for RC circuit

22/0.15

Ω/µF

ON-STATE CONDUCTION

PARAMETER

SYMBOL

TEST CONDITIONS

VALUES

UNITS

Maximum average on-state current

at case temperature

IT(AV)

180° conduction, half sine wave

105

A

85

°C

Maximum RMS on-state current

IT(RMS)

DC at 76 °C case temperature

165

A

Maximum peak, one half cycle,

non-repetitive surge current

ITSM

t = 10 ms

No voltage

reapplied

Sinusoidal half wave,

initial TJ = TJ maximum

3000

t = 8.3 ms

3150

t = 10 ms

100 % VRRM

reapplied

2530

t = 8.3 ms

2650

Maximum I2t for fusing

I2t

t = 10 ms

No voltage

reapplied

45

kA2s

t = 8.3 ms

41

t = 10 ms

100 % VRRM

reapplied

32

t = 8.3 ms

29

Maximum I2

√t for fusing

I2

√t

t = 0.1 to 10 ms, no voltage reapplied

450

kA2

√s

Maximum peak on-state voltage

VTM

ITM = 300 A, TJ = TJ maximum,

tp = 10 ms sine wave pulse

1.73

V

Low level value of threshold voltage

VT(TO)1

(16.7 % x

π x I

T(AV) < I < π x IT(AV)),

TJ = TJ maximum

1.32

High level value of threshold voltage

VT(TO)2

(I >

π x I

T(AV)), TJ = TJ maximum

1.35

Low level value of forward slope resistance

rt1

(16.7 % x

π x I

T(AV) < I < π x IT(AV)),

TJ = TJ maximum

1.40

m

Ω

High level value of forward slope resistance

rt2

(I >

π x I

T(AV)), TJ = TJ maximum

1.30

Maximum holding current

IH

TJ = 25 °C, IT > 30 A

600

mA

Typical latching current

IL

TJ = 25 °C, VA = 12 V, Ra = 6 Ω, IG = 1 A

1000

180° el

I

TM

180° el

I

TM

100 µs

I

TM

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