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ST083S12PFN1PBF 数据表(PDF) 7 Page - Vishay Siliconix |
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ST083S12PFN1PBF 数据表(HTML) 7 Page - Vishay Siliconix |
7 / 9 page Document Number: 94334 For technical questions, contact: ind-modules@vishay.com www.vishay.com Revision: 25-Jul-08 7 ST083SPbF Series Inverter Grade Thyristors (Stud Version), 85 A Vishay High Power Products Fig. 13 - Frequency Characteristics Fig. 14 - Maximum On-State Energy Power Loss Characteristics Fig. 15 - Gate Characteristics 10 10 100 1000 10 000 100 1000 10 000 Pulse Basewidth (µs) 400 2500 3000 100 1000 1500 2000 200 500 50 Hz ST083S Series Trapezoidal pulse T C = 60 °C dI/dt = 100 A/µs t p Snubber circuit R s = 22 Ω C s = 0.15 µF V D = 80 % VDRM 10 10 100 1000 10 000 100 1000 10 000 Pulse Basewidth (µs) 400 2500 100 1000 1500 2000 200 500 50 Hz Snubber circuit R s = 22 Ω C s = 0.15 µF V D = 80 % VDRM ST083S Series Trapezoidal pulse T C = 85 °C dI/dt = 100 A/µs t p Pulse Basewidth (µs) 20 joules per pulse 1 0.5 0.3 0.2 10 5 10 100 1000 10 000 10 100 1000 10 000 t p ST083S Series Sinusoidal pulse 0.1 3 2 Pulse Basewidth (µs) 20 joules per pulse 0.1 t p 10 100 1000 10 000 0.2 0.3 0.5 1 2 4 7.5 10 100 1000 10 000 ST083S Series Rectangular pulse dI/dt = 50 A/µs 0.1 1 10 100 0.001 V GD I GD (b) (a) (1) (2) Instantaneous Gate Current (A) (3) Device: ST083S Series (4) Frequency limited by P G(AV) 0.01 0.1 1 10 100 Rectangular gate pulse a) Recommended load line for rated dI/dt: 20 V, 10 Ω; t r ≤ 1 µs b) Recommended load line for ≤ 30 % rated dI/dt: 10 V, 10 Ω t r ≤ 1 µs (1) P GM = 10 W, tp = 20 ms (2) P GM = 20 W, tp = 10 ms (3) P GM = 40 W, tp = 5 ms (4) P GM = 60 W, tp = 3.3 ms |
类似零件编号 - ST083S12PFN1PBF |
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类似说明 - ST083S12PFN1PBF |
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