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TEA5101B 数据表(PDF) 3 Page - STMicroelectronics |
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TEA5101B 数据表(HTML) 3 Page - STMicroelectronics |
3 / 6 page ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit VDD Supply High Voltage Pin 5 250 V VCC Supply Low Voltage Pin 2 20 V IO IO Output Current to VDD to Ground Pins 7 - 10 - 13 Protected 8mA IF IF Output Current to VDD to Ground Pins 9 - 12 - 15 45 45 mA mA Ij Input Current Pins 1 - 3 - 4 60 mA Tj Junction Temperature 150 °C Toper Operating Ambient Temperature 0 to 70 °C Tstg Storage Temperature – 55 to + 150 °C THERMAL DATA Symbol Parameter Value Unit Rth(j-c) Maximum Junction Case Thermal Resistance Max. 3 °C/W Rth(j-a) Typical Junction Ambient Thermal Resistance Typ. 35 °C/W ELECTRICAL CHARACTERISTICS Tamb =25 oC; VCC = 12V ; VDD = 220V ; AV = 55 (unless otherwise specified) Symbol Parameter Min. Typ. Max. Unit VDD High Supply Voltage Pin 5 200 220 V VCC Low Supply Voltage Pin 2 10 12 15 V IDD High Voltage Supply Internal DC Current (Vout 100V) (without the current due to the feedback network ) Pin 5 9.5 15 mA ICC Low Voltage Supply Internal DC Current 38 55 mA Vsath Output Saturation Voltage (High level) IO =– 10 µA Pins 7-10-13 3 10 V RON Output Mos Transistor (Low level) RON @IO =3 mA Pins 7-10-13 1.7 k Ω BW Bandwidth (– 3db) (measured on CRT cathodes) (CLOAD : 10pF – R Protect = 1k Ω –Vout = 100V) ∆ Vout :50 VPP ∆ Vout : 100 VPP 10 8 MHz MHz TR -TF Rise Time and Fall Time : measured between 10% and 90% of output pulse (CLOAD : 10 pF – R Protect = 1 k Ω –Vout = 100 V) ∆ Vout : 100 VPP 50 ns GO Open Loop Gain 47 53 dB Open Loop Gain Difference between 2 channels -1.5 0 +1.5 dB Open Loop Gain Temperature Coefficient 0 dB/ oC P Internal Power Dissipation (see calculation below) 3.5 W VREF Internal Voltage Reference Pins 1-3-4 3.55 3.85 4.15 V Internal Reference Voltage Difference Between 2 Channels 250 mV Voltage Reference Temperature Coefficient 0 mV/ °C IIB Input Bias Current (Vout : 100 V) Pins 1-3-4 15 µA RI Input Resistance 14 k Ω TEA5101B 3/6 |
类似零件编号 - TEA5101B |
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类似说明 - TEA5101B |
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