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BAQ133 数据表(PDF) 2 Page - Vishay Siliconix |
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BAQ133 数据表(HTML) 2 Page - Vishay Siliconix |
2 / 5 page www.vishay.com 2 Document Number 85536 Rev. 1.7, 09-Dec-05 BAQ133 / 134 / 135 Vishay Semiconductors Electrical Characteristics Tamb = 25 °C, unless otherwise specified Typical Characteristics (Tamb = 25 °C unless otherwise specified) Parameter Test condition Part Symbol Min Typ. Max Unit Forward voltage IF = 100 mA VF 1V Reverse current E ≤ 300 lx, rated V R IR 13 nA E ≤ 300 lx, rated V R, Tj = 125 °C IR 0.5 μA E ≤ 300 lx, V R = 15 V BAQ133 IR 0.5 1 nA E ≤ 300 lx, V R = 30 V BAQ134 IR 0.5 1 nA E ≤ 300 lx, V R = 60 V BAQ135 IR 0.5 1 nA Breakdown voltage IR = 5 μA, tp/T = 0.01, tp = 0.3 ms BAQ133 V(BR) 40 V BAQ134 V(BR) 70 V BAQ135 V(BR) 140 V Diode capacitance VR = 0, f = 1 MHz CD 3pF Figure 1. Reverse Current vs. Junction Temperature Figure 2. Forward Current vs. Forward Voltage 040 80 120 160 1 10 100 1000 10000 Tj -Junction Temperature (°C) 200 94 9079 Scattering Limit VR =VRRM 0 0.4 0.8 1.2 1.6 0.1 1 10 100 1000 VF - Forward Voltage (V) 2.0 94 9078 Scattering Limit Tj =25 °C |
类似零件编号 - BAQ133_05 |
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类似说明 - BAQ133_05 |
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