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SMBG22A 数据表(PDF) 1 Page - Vishay Siliconix |
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SMBG22A 数据表(HTML) 1 Page - Vishay Siliconix |
1 / 6 page SMBG5.0 thru SMBG188CA Vishay General Semiconductor Document Number: 88456 Revision: 22-Oct-08 For technical questions within your region, please contact one of the following: PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com www.vishay.com 1 Surface Mount TRANSZORB® Transient Voltage Suppressors FEATURES • Low profile package • Ideal for automated placement • Glass passivated chip junction • Available in uni-directional and bi-directional • 600 W peak pulse power capability with a 10/1000 µs waveform, repetitive rate (duty cycle): 0.01 % • Excellent clamping capability • Very fast response time • Low incremental surge resistance • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • Solder dip 260 °C, 40 s • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC TYPICAL APPLICATIONS Use in sensitive electronics protection against voltage transients induced by inductive load switching and lighting on ICs, MOSFET, signal lines of sensor units for consumer, computer, industrial, automotive and telecommunication. MECHANICAL DATA Case: DO-215AA (SMBG) Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS compliant, commercial grade Base P/NHE3 - RoHS compliant, high reliability/ automotive grade (AEC Q101 qualified) Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD22-B102 E3 suffix meets JESD 201 class 1A whisker test, HE3 suffix meets JESD 201 class 2 whisker test Polarity: For uni-directional types the band denotes cathode end, no marking on bi-directional types DEVICES FOR BI-DIRECTION APPLICATIONS For bi-directional devices use C or CA suffix (e.g. SMBG10CA). Electrical characteristics apply in both directions. PRIMARY CHARACTERISTICS VWM 5.0 V to 188 V PPPM 600 W IFSM (uni-directional only) 100 A TJ max. 150 °C DO-215AA (SMBG) Notes: (1) Non-repetitive current pulse, per Fig. 3 and derated above TA = 25 °C per Fig. 2 (2) Mounted on 0.2 x 0.2" (5.0 x 5.0 mm) copper pads to each terminal MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL VALUE UNIT Peak pulse power dissipation with a 10/1000 µs waveform (1)(2) (Fig. 1) PPPM 600 W Peak pulse current with a 10/1000 µs waveform (1) IPPM See next table A Peak forward surge current 8.3 ms single half sine-wave uni-directional only (2) IFSM 100 A Operating junction and storage temperature range TJ, TSTG - 55 to + 150 °C |
类似零件编号 - SMBG22A |
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类似说明 - SMBG22A |
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