Document Number: 93173

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Revision: 14-May-08

5

SD263C..S50L Series

Fast Recovery Diodes

(Hockey PUK Version), 375 A

Vishay High Power Products

Fig. 11 - Typical Forward Recovery Characteristics

Fig. 12 - Recovery Time Characteristics

Fig. 13 - Recovery Charge Characteristics

Fig. 14 - Recovery Current Characteristics

Fig. 15 - Maximum Total Energy Loss Per Pulse Characteristics

0

50

100

150

200

250

300

350

400

450

500

0

2 00

4 0 0

6 00

80 0

1 00 0

1 20 0

1 40 0

1 600

1 8 0 0

2 0 0 0

SD 263C ..S 50L Se ries

T = 1 2 5°C

T = 2 5°C

J

J

R a te O f R ise O f Fo rw a rd C u rre n t - d i/d t (A /u s)

I

V

FP

2

3

4

5

6

7

8

9

10

1 0 0

1 000

Ra te Of F a ll Of F o rw a rd C urre nt - d i/d t (A /µs )

50 0 A

150 A

I

= 100 0 A

Sine Pu ls e

FM

S D 263C ..S 50L Se rie s

T = 1 2 5 °C ; V > 1 0 0 V

J

r

0

20 0

40 0

60 0

80 0

10 00

12 00

14 00

0

5 0

1 00 15 0 2 0 0 25 0 3 00

R a te O f Fa ll O f F o rwa rd Curre nt - d i/d t ( A/µs)

500 A

150 A

I

= 1000 A

Sin e Puls e

FM

SD 2 6 3 C ..S 5 0 L Se rie s

T = 1 2 5 ° C ; V > 1 0 0 V

J

r

0

10 0

20 0

30 0

40 0

50 0

60 0

0

5 0

1 00 15 0 2 0 0 2 5 0 3 0 0

500 A

Ra te Of F a ll Of F o rw a rd C urre nt - d i/d t (A /µs )

150 A

I

= 10 00 A

Sine Pu ls e

FM

S D 263C ..S5 0L S e r ies

T = 125 °C ; V > 1 0 0V

J

r

1E2

1E3

1E4

1E 1

1E2

1E3

1 E4

1

2

Pulse Basew idth ( µs )

10 jo ule s pe r pu ls e

6

4

0.5

0.3

dv /d t = 1 0 0 0 V/ µs

T = 125°C , V

= 1500V

J

RRM

Si nu so ida l Pu lse

SD 263C..S50L Se rie s

tp