SB1H100 datasheet(2/4 Pages) VISHAY

部件名	SB1H100

功能描述	High-Voltage Schottky Rectifier High Barrier Technology for Improved High Temperature Performance

Download	4 Pages

Scroll/Zoom	100%

制造商	VISHAY [Vishay Siliconix]

网页	http://www.vishay.com

标志

2 / 4 page

New Product

SB1H90 & SB1H100

Vishay General Semiconductor

www.vishay.com

For technical questions within your region, please contact one of the following:

PDD-Americas@vishay.com, PDD-Asia@vishay.com, PDD-Europe@vishay.com

Document Number: 88716

Revision: 19-May-08

2

Notes:

(1) Pulse test: 300 ms pulse width, 1 % duty cycle

(2) Pulse test: Pulse width

≤ 40 ms

Note:

(1) P.C.B. mounted with 0.2 x 0.2" (5.0 x 5.0 mm) copper pad areas

Note:

(1) Automotive grade AEC Q101 qualified

RATINGS AND CHARACTERISTICS CURVES

(TA = 25 °C unless otherwise noted)

ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)

PARAMETER

TEST CONDITIONS

SYMBOL

SB1H90

SB1H100

UNIT

Maximum instantaneous forward voltage (1)

IF = 1.0 A

IF = 2.0 A

TJ = 25 °C

TJ = 125 °C

TJ = 25 °C

TJ = 125 °C

VF

0.77

0.62

0.86

0.70

V

Maximum reverse current at rated VR

(2)

TJ = 25 °C

TJ = 125 °C

IR

1.0

0.5

µA

mA

THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)

PARAMETER

SYMBOL

SB1H90

SB1H100

UNIT

Maximum thermal resistance (1)

RθJA

RθJL

57

15

°C/W

ORDERING INFORMATION (Example)

PREFERRED P/N

UNIT WEIGHT (g)

PREFERRED PACKAGE CODE

BASE QUANTITY

DELIVERY MODE

SB1H100-E3/54

0.34

54

5500

13" diameter paper tape and reel

SB1H100-E3/73

0.34

73

3000

Ammo pack packaging

SB1H100HE3/54 (1)

0.34

54

5500

13" diameter paper tape and reel

SB1H100HE3/73 (1)

0.34

73

3000

Ammo pack packaging

Figure 1. Forward Current Derating Curve

0

0.6

0.8

1.0

50

25

75

100

125

150

175

Case Temperature (°C)

0.4

0.2

1.2

200

Figure 2. Typical Instantaneous Forward Characteristics

0.2

0

0.4

0.8

1.0

0.01

0.1

10

1

1.2

0.6

1.4

1.6

1.8

100

Instantaneous Forward Voltage (V)

T

J = 100 °C

T

J = 175 °C

T

J = 150 °C

T

J = 125 °C

T

J = 25 °C

类似零件编号 - SB1H100

制造商	部件名	数据表	功能描述
Vishay Siliconix	SB1H100	24Kb / 2P	High Voltage Schottky Rectifiers 25-Jun-02
Vishay Siliconix	SB1H100	71Kb / 4P	High-Voltage Schottky Rectifier Revision: 04-Aug-09
Shenzhen Taychipst Elec...	SB1H100	14Mb / 2P	High Voltage Schottky Rectifiers
Vishay Siliconix	SB1H100	74Kb / 4P	High Voltage Schottky Plastic Rectifier Revision: 13-Aug-13
Vishay Siliconix	SB1H100	75Kb / 5P	High-Voltage Schottky Rectifier Revision: 04-Aug-09

More results

类似说明 - SB1H100

制造商	部件名	数据表	功能描述
Vishay Siliconix	MBR10HXX	129Kb / 5P	High Voltage Schottky Rectifier High Barrier Technology for Improved High Temperature Performance Revision: 28-Jul-15
	SB3H90	97Kb / 4P	High-Voltage Schottky Rectifier High Barrier Technology for Improved High Temperature Performance Revision: 19-May-08
	SB5H90	96Kb / 4P	High-Voltage Schottky Rectifier High Barrier Technology for Improved High Temperature Performance Revision: 19-May-08
	M10HXX	118Kb / 4P	High Voltage Schottky Rectifier High Barrier Technology for Improved High Temperature Performance Revision: 20-Jan-15
	M10HXX	135Kb / 5P	High Voltage Schottky Rectifier High Barrier Technology for Improved High Temperature Performance Revision: 16-Mar-16
Kersemi Electronic Co.,...	MBR20H100CTG	1Mb / 3P	High Barrier Technology for Improved High Temperature Performance
Vishay Siliconix	M30HXXCT	131Kb / 4P	Dual Common Cathode High Voltage Schottky Rectifier High Barrier Technology for Improved High Temperature Performance Revision: 22-Jan-15
	MBR30H90CT	122Kb / 4P	Dual Common Cathode High Voltage Schottky Rectifier High Barrier Technology for Improved High Temperature Performance Revision: 17-Aug-15
	SS2PH9	104Kb / 4P	High-Voltage Surface Mount Schottky Barrier Rectifiers High Barrier Technology for Improved High Temperature Performance Revision: 19-May-08
	MBR7HXX	140Kb / 5P	Schottky Barrier Rectifier High Barrier Technology for Improved HighTemperature Performance Revision: 13-Aug-13