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BAY80-TAP 数据表(PDF) 1 Page - Vishay Siliconix |
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BAY80-TAP 数据表(HTML) 1 Page - Vishay Siliconix |
1 / 5 page BAY80 Document Number 85553 Rev. 1.8, 19-Feb-07 Vishay Semiconductors www.vishay.com 1 94 9367 Small Signal Switching Diode, High Voltage Features • Silicon Epitaxial Planar Diode • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC Applications • General purpose Mechanical Data Case: DO35 Glass case Weight: approx. 125 mg Cathode Band Color: black Packaging Codes/Options: TR/10 k per 13" reel (52 mm tape), 50 k/box TAP/10 k per Ammopack (52 mm tape), 50 k/box Parts Table Absolute Maximum Ratings Tamb = 25 °C, unless otherwise specified Thermal Characteristics Tamb = 25 °C, unless otherwise specified Part Ordering code Type Marking Remarks BAY80 BAY80-TR or BAY80-TAP BAY80 Tape and Reel/Ammopack Parameter Test condition Symbol Value Unit Repetitive peak reverse voltage VRRM 150 V Reverse voltage VR 120 V Peak forward surge current tp = 1 µs IFSM 1A Repetitive peak forward current IFRM 625 mA Forward continuous current IF 250 mA Average forward current IFAV 200 mA Parameter Test condition Symbol Value Unit Thermal resistance junction to ambient air l = 4 mm, TL = constant RthJA 350 K/W Junction to ambient air Tj + 175 °C Storage temperature range Tstg - 65 to + 175 °C e2 |
类似零件编号 - BAY80-TAP |
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类似说明 - BAY80-TAP |
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