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BAY80 数据表(PDF) 2 Page - Vishay Siliconix |
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BAY80 数据表(HTML) 2 Page - Vishay Siliconix |
2 / 5 page www.vishay.com 2 Document Number 85553 Rev. 1.8, 19-Feb-07 BAY80 Vishay Semiconductors Electrical Characteristics Tamb = 25 °C, unless otherwise specified Typical Characteristics Tamb = 25 °C, unless otherwise specified Parameter Test condition Symbol Min Typ. Max Unit Forward voltage IF = 0.1 mA VF 400 520 mV IF = 10 mA VF 630 780 mV IF = 50 mA VF 730 920 mV IF = 100 mA VF 780 1000 mV IF = 150 mA VF 1070 mV Reverse current VR = 120 V IR 100 nA VR = 120 V, Tj = 150 °C IR 100 µA Breakdown voltage IR = 100 µA, tp/T = 0.01, tp = 0.3 ms V(BR) 150 V Diode capacitance VR = 0, f = 1 MHz CD 1.5 5 pF Differential forward resistance IF = 10 mA rf 5 Ω Reverse recovery time IF = IR = 30 mA, iR = 3 mA, RL = 100 Ω trr 50 ns Figure 1. Reverse Current vs. Junction Temperature Figure 2. Forward Current vs. Forward Voltage 040 80 120 160 0.01 0.1 1 10 1000 Tj -Junction Temperature (°C) 200 94 9084 100 Scattering Limit V R = VRRM 0 0.4 0.8 1.2 1.6 0.1 1 10 100 1000 VF - Forward Voltage (V) 2.0 94 9085 Scattering Limit T j = 25 °C Figure 3. Differential Forward Resistance vs. Forward Current 0.1 1 10 1 10 100 1000 IF - Forward Current (mA) 100 94 9089 T j = 25 °C |
类似零件编号 - BAY80 |
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类似说明 - BAY80 |
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