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BAW75 数据表(PDF) 2 Page - Vishay Siliconix |
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BAW75 数据表(HTML) 2 Page - Vishay Siliconix |
2 / 4 page www.vishay.com 2 Document Number 85550 Rev. 1.6, 19-Feb-07 BAW75 Vishay Semiconductors Electrical Characteristics Tamb = 25 °C, unless otherwise specified Package Dimensions in millimeters (inches): DO35 Parameter Test condition Symbol Min Typ. Max Unit Forward voltage IF = 30 mA VF 1000 mV Reverse current VR = 25 V IR 100 nA VR = 25 V, Tj = 150 °C IR 100 μA Breakdown voltage IR = 5 µA, tp/T = 0.01, tp = 0.3 ms V(BR) 35 V Diode capacitance VR = 0, f = 1 MHz, VHF = 50 mV CD 4pF Reverse recovery time IF = IR = 10 mA, IR = 1 mA trr 4ns IF = 10 mA, VR = 6 V, IR = 1 mA, RL = 100 Ω trr 2ns 94 9366 26 min. (1.024) 3.9 max. (0.154) 26 min. (1.024) Cathode Identification Rev. 6 - Date: 29.January 2007 Document no.: 6.560-5004.02-4 |
类似零件编号 - BAW75 |
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类似说明 - BAW75 |
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