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TSHG6410 数据表(PDF) 3 Page - Vishay Siliconix |
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TSHG6410 数据表(HTML) 3 Page - Vishay Siliconix |
3 / 5 page Document Number: 81870 For technical questions, contact: emittertechsupport@vishay.com www.vishay.com Rev. 1.1, 04-Sep-08 205 TSHG6410 High Speed Infrared Emitting Diode, RoHS Compliant, 850 nm, GaAlAs Double Hetero Vishay Semiconductors BASIC CHARACTERISTICS Tamb = 25 °C, unless otherwise specified Fig. 3 - Pulse Forward Current vs. Pulse Duration Fig. 4 - Forward Current vs. Forward Voltage Fig. 5 - Radiant Intensity vs. Forward Current Fig. 6 - Radiant Power vs. Forward Current Fig. 7 - Relative Radiant Power vs. Wavelength Fig. 8 - Relative Radiant Intensity vs. Angular Displacement 100 1000 0.01 0.1 1.0 10 100 t P - Pulse Duration (ms) 16031 t P/T = 0.01 0.05 0.2 0.5 0.1 0.02 T amb < 50 °C 18873 1000 100 10 1 V F - Forward Voltage (V) 02 4 t P = 100 µs t P/T = 0.001 13 1 10 100 1000 1 10 100 1000 t P = 0.1 ms 21308 I F - Forward Current (mA) 0.1 1 10 100 1000 110 100 1000 16971 IF - Forward Current (mA) 800 850 λ- Wavelength (nm) 900 16972 0 0.25 0.5 0.75 1.0 1.25 21355 0.6 0.9 0.8 0° 30° 10° 20° 40° 50° 60° 70° 80° 0.7 1.0 0 0.2 0.4 |
类似零件编号 - TSHG6410 |
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类似说明 - TSHG6410 |
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