SI5935CDC-T1-E3 datasheet(4/7 Pages) VISHAY

部件名	SI5935CDC-T1-E3

功能描述	Dual P-Channel 20-V (D-S) MOSFET

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制造商	VISHAY [Vishay Siliconix]

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Document Number: 68965

S-82573-Rev. A, 27-Oct-08

Vishay Siliconix

Si5935CDC

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Source-Drain Diode Forward Voltage

Threshold Voltage

0.1

1

10

100

0.1

0.30.5

0.70.9

1.11.3

TJ = 150 °C

VSD -Source-to-Drain Voltage (V)

TJ = 25 °C

0.2

0.3

0.4

0.5

0.6

0.7

0.8

- 50

- 25

0

25

50

75

100

125

150

ID = 250 µA

TJ - Temperature (°C)

On-Resistance vs. Gate-to-Source Voltage

Single Pulse Power

0.00

0.03

0.06

0.09

0.12

0.15

0.18

024

6

8

VGS - Gate-to-Source Voltage (V)

TJ = 25 °C

TJ = 125 °C

ID = - 3.1 A

0

10

20

30

40

Time (s)

1

10-1

10-4

10-3

10-2

1000

100

10

Safe Operating Area, Junction-to-Case

TA = 25 °C

Single Pulse

100 ms

1s,10s

DC

Limited byRDS(on)*

BVDSS

Limited

10 ms

1ms

100 µs

VDS - Drain-to-Source Voltage (V)

* VGS > minimum VGS at which RDS(on) is specified

100

1

0.1

1

10

100

0.01

10

0.1

类似零件编号 - SI5935CDC-T1-E3

制造商	部件名	数据表	功能描述
Vishay Siliconix	SI5935CDC	247Kb / 11P	Dual P-Channel 20 V (D-S) MOSFET 01-Jan-2022
	SI5935CDC	247Kb / 11P	Dual P-Channel 20 V (D-S) MOSFET 01-Jan-2022
	SI5935CDC	247Kb / 11P	Dual P-Channel 20 V (D-S) MOSFET 01-Jan-2022

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类似说明 - SI5935CDC-T1-E3

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