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SI5920DC-T1-E3 数据表(PDF) 4 Page - Vishay Siliconix |
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SI5920DC-T1-E3 数据表(HTML) 4 Page - Vishay Siliconix |
4 / 7 page www.vishay.com 4 Document Number: 73490 S-70914-Rev. C, 07-May-07 Vishay Siliconix Si5920DC New Product TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted Forward Diode Voltage vs. Temp Threshold Voltage 0.0 0.2 0.4 0.6 0.8 1.0 0.1 TA = 25 °C TA = 150 °C VSD - Source-to-Drain Voltage (V) 1.0 10.0 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 - 50 - 25 0 25 50 75 100 125 150 ID = 250 µA TJ - Temperature (°C) rDS(on) vs. VGS vs. Temperature Single Pulse Power 0.02 0.03 0.04 0.05 0.06 012345 VGS - Gate-to-Source Voltage (V) TA = 25 °C TA = 125 °C 0 30 50 10 20 Time (sec) 40 1 100 600 10 10-1 10-2 10-4 10-3 Safe Operating Area, Junction-to-Case VDS - Drain-to-Source Voltage (V) *VGS > minimum VGS at which rDS(on) is specified 100 1 0.1 1 10 100 0.01 10 1 s 0.1 T A = 25 °C Single Pulse 10 s dc 10 ms 100 ms *Limited by rDS(on) |
类似零件编号 - SI5920DC-T1-E3 |
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类似说明 - SI5920DC-T1-E3 |
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