SI5445BDC datasheet(1/6 Pages) VISHAY

部件名	SI5445BDC

功能描述	P-Channel 1.8-V (G-S) MOSFET

Download	6 Pages

Scroll/Zoom	100%

制造商	VISHAY [Vishay Siliconix]

网页	http://www.vishay.com

标志

1 / 6 page

FEATURES

D TrenchFETr Power MOSFET

Si5445BDC

Vishay Siliconix

New Product

Document Number: 73251

S-50133—Rev. A, 24-Jan-05

www.vishay.com

1

P-Channel 1.8-V (G-S) MOSFET

PRODUCT SUMMARY

VDS (V)

rDS(on) (W)

ID (A)

Qg (Typ)

0.033 @ VGS = −4.5 V

−7.1

−8

0.043 @ VGS = −2.5 V

−6.2

14

0.060 @ VGS = −1.8 V

−5.3

1206-8 ChipFE

Tr

D

G

D

S

1

Bottom View

Marking Code

BM XX

Lot Traceability

and Date Code

Part # Code

S

G

D

P-Channel MOSFET

Ordering Information:

Si5445BDC-T1—E3

ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED)

Parameter

Symbol

5 secs

Steady State

Unit

Drain-Source Voltage

VDS

−8

V

Gate-Source Voltage

VGS

"8

V

Continuous Drain Current (TJ = 150_C)a

TA = 25_C

ID

−7.1

−5.2

Continuous Drain Current (TJ = 150_C)a

TA = 85_C

ID

−5.2

−3.7

A

Pulsed Drain Current

IDM

"20

A

Continuous Source Currenta

IS

−2.1

−1.1

Maximum Power Dissipationa

TA = 25_C

PD

2.5

1.3

W

Maximum Power Dissipationa

TA = 85_C

PD

1.3

0.7

W

Operating Junction and Storage Temperature Range

TJ, Tstg

−55 to 150

_C

Soldering Recommendations (Peak Temperature)b, c

260

_C

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

Mi

J

ti

t A bi ta

t v 5 sec

R

45

50

Maximum Junction-to-Ambienta

Steady State

RthJA

85

95

_C/W

Maximum Junction-to-Foot (Drain)

Steady State

RthJF

17

20

C/W

Notes

a.

Surface Mounted on 1” x 1” FR4 Board.

b.

See Reliability Manual for profile. The ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation

process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder intercon-

nection.

c.

Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components.

类似零件编号 - SI5445BDC

制造商	部件名	数据表	功能描述
Vishay Siliconix	SI5445BDC	93Kb / 1P	P-Channel, 1.8-V (G-S) MOSFET 14-Apr-05

More results

类似说明 - SI5445BDC

制造商	部件名	数据表	功能描述
Vishay Siliconix	SI1305DL	42Kb / 4P	P-Channel 1.8-V (G-S) MOSFET Rev. C, 07-Apr-03
	SI2311DS-T1-E3	214Kb / 8P	P-Channel 1.8-V (G-S) MOSFET Rev. B, 24-Mar-08
	SI1407DL-T1	80Kb / 5P	P-Channel 1.8-V (G-S) MOSFET Rev. D, 12-Jun-06
	SI4465ADY	216Kb / 4P	P-Channel 1.8-V (G-S) MOSFET Rev. A, 01-Jan-07
	SI6467BDQ	196Kb / 4P	P-Channel 1.8-V (G-S) MOSFET Rev. B, 12-Dec-05
	SI1307DL	68Kb / 4P	P-Channel 1.8-V (G-S) MOSFET Rev. A, 01-Nov-99
	SI1407DL	64Kb / 4P	P-Channel 1.8-V (G-S) MOSFET Rev. C, 17-Jul-00
	SI1305DL	109Kb / 5P	P-Channel 1.8-V (G-S) MOSFET S-51075-Rev. D, 13-Jun-05
Leshan Radio Company	LSI1013XT1G	371Kb / 6P	P-Channel 1.8-V (G-S) MOSFET
Vishay Siliconix	SI6467BDQ-T1-E3	208Kb / 11P	P-Channel 1.8-V (G-S) MOSFET Rev. D, 31-Mar-08
Vishay Siliconix	SI2315BDS	181Kb / 8P	P-Channel 1.8-V (G-S) MOSFET 01-Jan-2022