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SI3850ADV-T1-E3 数据表(PDF) 4 Page - Vishay Siliconix |
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SI3850ADV-T1-E3 数据表(HTML) 4 Page - Vishay Siliconix |
4 / 9 page www.vishay.com 4 Document Number: 73789 S-60470-Rev. A, 27-Mar-06 Vishay Siliconix Si3850ADV N-CHANNEL TYPICAL CHARACTERISTICS 25 °C, unless noted Source-Drain Diode Forward Voltage Threshold Voltage 0.01 0.1 0.0 0.3 0.6 0.9 1.2 1.5 1 10 VSD – Source-to-Drain Voltage (V) 25 °C 0.001 150 °C TJ – Temperature (°C) - 0.4 - 0.3 - 0.2 - 0.1 - 0.0 0.1 0.2 - 50 - 25 0 25 50 75 100 125 150 ID = 250 µA ID = 5 mA On-Resistance vs. Gate-to-Source Voltage Single Pulse Power VGS – Gate-to-Source Voltage (V) 0.0 0.3 0.6 0.9 1.2 1.5 012345 25 °C 125 °C Time (sec) 110 0.1 0.01 0.001 0 6 12 18 24 30 Safe Operating Area 10 s TA = 25 °C Single Pulse dc VDS – Drain-to-Source Voltage (V) * VGS minimum VGS at which rDS(on) is specified 0.01 0.1 1 10 0.1 1 10 100 BVDSS Limited *Limited by rDS(on) 1 s 100 ms 10 ms 1 ms |
类似零件编号 - SI3850ADV-T1-E3 |
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类似说明 - SI3850ADV-T1-E3 |
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