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SI3805DV 数据表(PDF) 2 Page - Vishay Siliconix |
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SI3805DV 数据表(HTML) 2 Page - Vishay Siliconix |
2 / 10 page www.vishay.com 2 Document Number: 68912 S-82297-Rev. A, 22-Sep-08 Vishay Siliconix Si3805DV New Product Notes: a. Based on TC = 25 °C. b. Surface Mounted on 1" x 1" FR4 board. c. t = 5 s d. Maximum under Steady State conditions is 150 °C/W. e. Maximum under Steady State conditions is 155 °C/W. THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambient (MOSFET)b, d t ≤ 5 s RthJA 93 110 °C/W Maximum Junction-to-Foot (Drain) (MOSFET) Steady State RthJF 75 90 Maximum Junction-to-Ambient (Schottky)b, e t ≤ 5 s RthJA 97 115 Maximum Junction-to-Foot (Drain) (Schottky) Steady State RthJF 78 95 SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage VDS VGS = 0 V, ID = - 250 µA - 20 V VDS Temperature Coefficient ΔV DS/TJ ID = - 250 µA - 20 mV/°C VGS(th) Temperature Coefficient ΔV GS(th)/TJ 3 Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = - 250 µA - 0.6 - 1.5 V Gate-Source Leakage IGSS VDS = 0 V, VGS = ± 12 V ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = - 20 V, VGS = 0 V - 1 µA VDS = - 20 V, VGS = 0 V, TJ = 55 °C - 10 On-State Drain Currenta ID(on) VDS ≤ 5 V, VGS = - 4.5 V - 15 A Drain-Source On-State Resistancea RDS(on) VGS = - 10 V, ID = - 3.0 A 0.070 0.084 Ω VGS = - 4.5 V, ID = - 2.6 A 0.090 0.108 VGS = - 2.5 V, ID = 2.1 A 0.140 0.175 Forward Transconductancea gfs VDS = - 10 V, ID = - 3.0 A 6S Dynamicb Input Capacitance Ciss VDS = - 10 V, VGS = 0 V, f = 1 MHz 330 pF Output Capacitance Coss 80 Reverse Transfer Capacitance Crss 57 Total Gate Charge Qg VDS = - 10 V, VGS = - 10 V, ID = - 3.0 A 812 nC VDS = - 10 V, VGS = - 4.5 V, ID = - 3.0 A 46 Gate-Source Charge Qgs 0.8 Gate-Drain Charge Qgd 1.4 Gate Resistance Rg f = 1 MHz 1.2 6 12 Ω Turn-On Delay Time td(on) VDD = - 10 V, RL = 4.2 Ω ID ≅ - 2.4 A, VGEN = - 10 V, Rg = 1 Ω 36 ns Rise Time tr 10 20 Turn-Off DelayTime td(off) 16 24 Fall Time tf 815 Turn-On Delay Time td(on) VDD = - 10 V, RL = 4.2 Ω ID ≅ - 2.4 A, VGEN = - 4.5 V, Rg = 1 Ω 18 27 Rise Time tr 40 60 Turn-Off DelayTime td(off) 18 27 Fall Time tf 10 15 |
类似零件编号 - SI3805DV |
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类似说明 - SI3805DV |
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