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SI3805DV 数据表(PDF) 2 Page - Vishay Siliconix

部件名 SI3805DV
功能描述  P-Channel 20-V (D-S) MOSFET with Schottky Diode
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制造商  VISHAY [Vishay Siliconix]
网页  http://www.vishay.com
标志 VISHAY - Vishay Siliconix

SI3805DV 数据表(HTML) 2 Page - Vishay Siliconix

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Document Number: 68912
S-82297-Rev. A, 22-Sep-08
Vishay Siliconix
Si3805DV
New Product
Notes:
a. Based on TC = 25 °C.
b. Surface Mounted on 1" x 1" FR4 board.
c. t = 5 s
d. Maximum under Steady State conditions is 150 °C/W.
e. Maximum under Steady State conditions is 155 °C/W.
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient (MOSFET)b, d
t
≤ 5 s
RthJA
93
110
°C/W
Maximum Junction-to-Foot (Drain) (MOSFET)
Steady State
RthJF
75
90
Maximum Junction-to-Ambient (Schottky)b, e
t
≤ 5 s
RthJA
97
115
Maximum Junction-to-Foot (Drain) (Schottky)
Steady State
RthJF
78
95
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
VDS
VGS = 0 V, ID = - 250 µA
- 20
V
VDS Temperature Coefficient
ΔV
DS/TJ
ID = - 250 µA
- 20
mV/°C
VGS(th) Temperature Coefficient
ΔV
GS(th)/TJ
3
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS, ID = - 250 µA
- 0.6
- 1.5
V
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 12 V
± 100
nA
Zero Gate Voltage Drain Current
IDSS
VDS = - 20 V, VGS = 0 V
- 1
µA
VDS = - 20 V, VGS = 0 V, TJ = 55 °C
- 10
On-State Drain Currenta
ID(on)
VDS ≤ 5 V, VGS = - 4.5 V
- 15
A
Drain-Source On-State Resistancea
RDS(on)
VGS = - 10 V, ID = - 3.0 A
0.070
0.084
Ω
VGS = - 4.5 V, ID = - 2.6 A
0.090
0.108
VGS = - 2.5 V, ID = 2.1 A
0.140
0.175
Forward Transconductancea
gfs
VDS = - 10 V, ID = - 3.0 A
6S
Dynamicb
Input Capacitance
Ciss
VDS = - 10 V, VGS = 0 V, f = 1 MHz
330
pF
Output Capacitance
Coss
80
Reverse Transfer Capacitance
Crss
57
Total Gate Charge
Qg
VDS = - 10 V, VGS = - 10 V, ID = - 3.0 A
812
nC
VDS = - 10 V, VGS = - 4.5 V, ID = - 3.0 A
46
Gate-Source Charge
Qgs
0.8
Gate-Drain Charge
Qgd
1.4
Gate Resistance
Rg
f = 1 MHz
1.2
6
12
Ω
Turn-On Delay Time
td(on)
VDD = - 10 V, RL = 4.2 Ω
ID ≅ - 2.4 A, VGEN = - 10 V, Rg = 1 Ω
36
ns
Rise Time
tr
10
20
Turn-Off DelayTime
td(off)
16
24
Fall Time
tf
815
Turn-On Delay Time
td(on)
VDD = - 10 V, RL = 4.2 Ω
ID ≅ - 2.4 A, VGEN = - 4.5 V, Rg = 1 Ω
18
27
Rise Time
tr
40
60
Turn-Off DelayTime
td(off)
18
27
Fall Time
tf
10
15


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