数据搜索系统,热门电子元器件搜索
  Chinese  ▼
ALLDATASHEETCN.COM

X  

SI3483CDV-T1-E3 数据表(PDF) 2 Page - Vishay Siliconix

部件名 SI3483CDV-T1-E3
功能描述  P-Channel 30-V (D-S) MOSFET
Download  7 Pages
Scroll/Zoom Zoom In 100%  Zoom Out
制造商  VISHAY [Vishay Siliconix]
网页  http://www.vishay.com
标志 VISHAY - Vishay Siliconix

SI3483CDV-T1-E3 数据表(HTML) 2 Page - Vishay Siliconix

  SI3483CDV-T1-E3 Datasheet HTML 1Page - Vishay Siliconix SI3483CDV-T1-E3 Datasheet HTML 2Page - Vishay Siliconix SI3483CDV-T1-E3 Datasheet HTML 3Page - Vishay Siliconix SI3483CDV-T1-E3 Datasheet HTML 4Page - Vishay Siliconix SI3483CDV-T1-E3 Datasheet HTML 5Page - Vishay Siliconix SI3483CDV-T1-E3 Datasheet HTML 6Page - Vishay Siliconix SI3483CDV-T1-E3 Datasheet HTML 7Page - Vishay Siliconix  
Zoom Inzoom in Zoom Outzoom out
 2 / 7 page
background image
www.vishay.com
2
Document Number: 68603
S-80893-Rev. A, 21-Apr-08
Vishay Siliconix
Si3483CDV
New Product
Notes:
a. Pulse test; pulse width
≤ 300 µs, duty cycle ≤ 2 %
b. Guaranteed by design, not subject to production testing.
Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation
of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum
rating conditions for extended periods may affect device reliability.
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
Parameter
Symbol
Test Conditions
Min.
Typ.
Max.
Unit
Static
Drain-Source Breakdown Voltage
VDS
VGS = 0 V, ID = - 250 µA
- 30
V
VDS Temperature Coefficient
ΔV
DS/TJ
ID = - 250 µA
- 32
mV/°C
VGS(th) Temperature Coefficient
ΔV
GS(th)/TJ
5
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS, ID = - 250 µA
- 1.0
- 3.0
V
Gate-Source Leakage
IGSS
VDS = 0 V, VGS = ± 20 V
± 100
nA
Zero Gate Voltage Drain Current
IDSS
VDS = - 30 V, VGS = 0 V
- 1
µA
VDS = - 30 V, VGS = 0 V, TJ = 85 °C
- 10
On-State Drain Currenta
ID(on)
VDS ≤ - 5 V, VGS = - 10 V
- 20
A
Drain-Source On-State Resistancea
RDS(on)
VGS = - 10 V, ID = - 6.1 A
0.027
0.034
Ω
VGS = - 4.5 V, ID = - 2 A
0.044
0.053
Forward Transconductancea
gfs
VDS = - 15 V, ID = - 6.1 A
13
S
Dynamicb
Input Capacitance
Ciss
VDS = - 15 V, VGS = 0 V, f = 1 MHz
1000
pF
Output Capacitance
Coss
170
Reverse Transfer Capacitance
Crss
140
Total Gate Charge
Qg
VDS = - 15 V, VGS = - 10 V, ID = - 6.1 A
22
33
nC
VDS = - 15 V, VGS = - 4.5 V, ID = - 6.1 A
11.5
18
Gate-Source Charge
Qgs
3.4
Gate-Drain Charge
Qgd
5.7
Gate Resistance
Rg
f = 1 MHz
5.6
Ω
Turn-On Delay Time
td(on)
VDD = - 15 V, RL = 3.1 Ω
ID ≅ - 4.9 A, VGEN = - 4.5 V, Rg = 1 Ω
45
70
ns
Rise Time
tr
135
205
Turn-Off Delay Time
td(off)
25
40
Fall Time
tf
15
25
Turn-On Delay Time
td(on)
VDD = - 15 V, RL = 3.1 Ω
ID ≅ - 4.9 A, VGEN = - 10 V, Rg = 1 Ω
10
15
Rise Time
tr
15
25
Turn-Off Delay Time
td(off)
30
45
Fall Time
tf
10
15
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
TC = 25 °C
- 3.5
A
Pulse Diode Forward Currenta
ISM
- 25
Body Diode Voltage
VSD
IS = - 4.9 A
- 0.8
- 1.2
V
Body Diode Reverse Recovery Time
trr
IF = - 4.9 A, di/dt = 100 A/µs, TJ = 25 °C
25
50
ns
Body Diode Reverse Recovery Charge
Qrr
17
35
nC
Reverse Recovery Fall Time
ta
14
ns
Reverse Recovery Rise Time
tb
11


类似零件编号 - SI3483CDV-T1-E3

制造商部件名数据表功能描述
logo
Vishay Siliconix
SI3483CDV-T1-E3 VISHAY-SI3483CDV-T1-E3 Datasheet
245Kb / 11P
   P-Channel 30 V (D-S) MOSFET
01-Jan-2022
More results

类似说明 - SI3483CDV-T1-E3

制造商部件名数据表功能描述
logo
Vishay Siliconix
SI2341DS VISHAY-SI2341DS Datasheet
43Kb / 5P
   P-Channel 30-V (D-S) MOSFET
Rev. B, 11-Aug-03
SI4835BDY VISHAY-SI4835BDY_05 Datasheet
90Kb / 6P
   P-Channel 30-V (D-S) MOSFET
Rev. D, 25-Oct-0
logo
Anachip Corp
AF4407 ANACHIP-AF4407 Datasheet
263Kb / 5P
   P-Channel 30-V (D-S) MOSFET
logo
Vishay Siliconix
SI7423DN VISHAY-SI7423DN Datasheet
173Kb / 3P
   P-Channel 30-V (D-S) MOSFET
24-May-04
SI2303ADS VISHAY-SI2303ADS Datasheet
39Kb / 4P
   P-Channel, 30-V (D-S) MOSFET
Rev. B, 29-Apr-02
SI3481DV VISHAY-SI3481DV Datasheet
67Kb / 5P
   P-Channel 30-V (D-S) MOSFET
Rev. B, 16-Feb-04
logo
DinTek Semiconductor Co...
DTM4415 DINTEK-DTM4415 Datasheet
286Kb / 9P
   P-Channel 30-V (D-S) MOSFET
logo
Vishay Siliconix
SI4435DDY-T1-GE3 VISHAY-SI4435DDY-T1-GE3 Datasheet
279Kb / 10P
   P-Channel 30-V (D-S) MOSFET
Rev. C, 18-May-09
SI7121DN VISHAY-SI7121DN Datasheet
552Kb / 13P
   P-Channel 30-V (D-S) MOSFET
Rev. C, 23-Jun-08
SI4825DDY-T1 VISHAY-SI4825DDY-T1 Datasheet
242Kb / 10P
   P-Channel 30-V (D-S) MOSFET
Rev. A, 13-Oct-08
SI7129DN VISHAY-SI7129DN Datasheet
566Kb / 13P
   P-Channel 30 V (D-S) MOSFET
Rev. B, 06-Sep-10
More results


Html Pages

1 2 3 4 5 6 7


数据表 下载

Go To PDF Page


链接网址




隐私政策
ALLDATASHEETCN.COM
ALLDATASHEET是否为您带来帮助?  [ DONATE ] 

关于 Alldatasheet   |   广告服务   |   联系我们   |   隐私政策   |   链接交换   |   制造商名单
All Rights Reserved©Alldatasheet.com


Mirror Sites
English : Alldatasheet.com  |   English : Alldatasheet.net  |   Chinese : Alldatasheetcn.com  |   German : Alldatasheetde.com  |   Japanese : Alldatasheet.jp
Russian : Alldatasheetru.com  |   Korean : Alldatasheet.co.kr  |   Spanish : Alldatasheet.es  |   French : Alldatasheet.fr  |   Italian : Alldatasheetit.com
Portuguese : Alldatasheetpt.com  |   Polish : Alldatasheet.pl  |   Vietnamese : Alldatasheet.vn
Indian : Alldatasheet.in  |   Mexican : Alldatasheet.com.mx  |   British : Alldatasheet.co.uk  |   New Zealand : Alldatasheet.co.nz
Family Site : ic2ic.com  |   icmetro.com