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SI3459BDV 数据表(PDF) 1 Page - Vishay Siliconix |
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SI3459BDV 数据表(HTML) 1 Page - Vishay Siliconix |
1 / 7 page Vishay Siliconix Si3459BDV New Product Document Number: 69954 S-80430-Rev. A, 03-Mar-08 www.vishay.com 1 P-Channel 60-V (D-S) MOSFET FEATURES • TrenchFET® Power MOSFET • 100 % Rg Tested APPLICATIONS • Load Switch PRODUCT SUMMARY VDS (V) rDS(on) (Ω) ID (A) d Qg (Typ.) - 60 0.216 at VGS = - 10 V - 2.9 4.4 nC 0.288 at VGS = - 4.5 V - 2.5 Marking Code AS XXX Lot Traceability and Date Code Part # Code Ordering Information: Si3459BDV-T1-E3 (Lead (Pb)-free) TSOP-6 Top View 6 4 1 2 3 5 3 mm 2.85 mm D D D D S G S G D P-Channel MOSFET Notes: a. Surface Mounted on 1" x 1" FR4 board. b. t = 5 s. c. Maximum under steady state conditions is 110 °C/W. d. Based on TC = 25 °C. ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted Parameter Symbol Limit Unit Drain-Source Voltage VDS - 60 V Gate-Source Voltage VGS ± 20 Continuous Drain Current (TJ = 150 °C) TC = 25 °C ID - 2.9 A TC = 70 °C - 2.3 TA = 25 °C - 2.2a, b TA = 70 °C - 1.8a, b Pulsed Drain Current IDM - 8 Continuous Source-Drain Diode Current TC = 25 °C IS - 2.9 TA = 25 °C - 1.7a, b Maximum Power Dissipation TC = 25 °C PD 3.3 W TC = 70 °C 2.1 TA = 25 °C 2a, b TA = 70 °C 1.3a, b Operating Junction and Storage Temperature Range TJ, Tstg - 55 to 150 °C Soldering Recommendations (Peak Temperature) 260 THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambienta, c t ≤ 5 s RthJA 53 62.5 °C/W Maximum Junction-to-Foot (Drain) Steady State RthJF 32 38 RoHS COMPLIANT |
类似零件编号 - SI3459BDV |
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类似说明 - SI3459BDV |
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