SI2328DS_08 datasheet(2/5 Pages) VISHAY

部件名	SI2328DS

功能描述	N-Channel 100-V (D-S) MOSFET

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制造商	VISHAY [Vishay Siliconix]

网页	http://www.vishay.com

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Si2328DS

Vishay Siliconix

www.vishay.com

2

Document Number: 71796

S-41259—Rev. C, 05-Jul-04

SPECIFICATIONS (TA = 25_C UNLESS OTHERWISE NOTED)

Limits

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Static

Drain-Source Breakdown Voltage

V(BR)DSS

VGS = 0 V, ID = 1 mA

100

V

Gate-Threshold Voltage

VGS(th)

VDS = VGS, ID = 250 mA

2

4

V

Gate-Body Leakage

IGSS

VDS = 0 V, VGS = "20 V

"100

nA

Zero Gate Voltage Drain Current

IDSS

VDS = 100 V, VGS = 0 V

1

mA

Zero Gate Voltage Drain Current

IDSS

VDS = 100 V, VGS = 0 V, TJ = 70_C

75

mA

On-State Drain Currenta

ID(on)

VDS w 15 V, VGS = 10 V

6

A

Drain-Source On-Resistancea

rDS(on)

VGS = 10 V, ID = 1.5 A

0.195

0.250

W

Forward Transconductancea

gfs

VDS = 15 V, ID = 1.5 A

4

S

Diode Forward Voltage

VSD

IS = 1.0 A, VGS = 0 V

0.8

1.2

V

Dynamicb

Total Gate Charge

Qg

3.3

4.0

Gate-Source Charge

Qgs

VDS = 50 V, VGS = 10 V, ID = 1.5 A

0.47

nC

Gate-Drain Charge

Qgd

1.45

Gate Resistance

Rg

0.5

2.4

W

Switching

Turn-On Delay Time

td(on)

7

11

Rise Time

tr

VDD = 50 V, RL = 33 W

11

17

ns

Turn-Off Delay Time

td(off)

VDD = 50 V, RL = 33 W

ID ^ 0.2 A, VGEN = 10 V, Rg = 6 W

9

15

ns

Fall-Time

tf

10

15

Source-Drain Reverse Recovery Time

trr

IF = 1.5 A, di/dt = 100 A/ms

50

100

ns

Notes

a.

Pulse test: PW v300 ms duty cycle v2%.

b.

Guaranteed by design, not subject to production testing.

TYPICAL CHARACTERISTICS (25_C UNLESS NOTED)

0

3

6

9

12

02

46

8

0

3

6

9

12

02468

10

VGS = 10, 9, 8 V

TC = 125_C

−55_C

6 V

25_C

Output Characteristics

Transfer Characteristics

VDS − Drain-to-Source Voltage (V)

VGS − Gate-to-Source Voltage (V)

5 V

4 V

7 V

3, 2, 1 V

类似零件编号 - SI2328DS_08

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类似说明 - SI2328DS_08

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