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SI2309DS-T1 数据表(PDF) 3 Page - Vishay Siliconix |
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SI2309DS-T1 数据表(HTML) 3 Page - Vishay Siliconix |
3 / 5 page Document Number: 70835 S-72216-Rev. C, 22-Oct-07 www.vishay.com 3 Vishay Siliconix Si2309DS TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted On-Resistance vs. Drain Current Gate Charge Source-Drain Diode Forward Voltage 0.0 0.3 0.6 0.9 1.2 1.5 02468 VGS = 4.5 V VGS = 10 V ID - Drain Current (A) 0 2 4 6 8 10 0 123 456 VDS = 30 V ID = 1.25 A Qg - Total Gate Charge (nC) 1.0 1.2 0.1 1 10 0.00 0.2 0.4 0.6 0.8 TJ = 25 °C VSD - Source-to-Drain Voltage (V) TJ = 150 °C Capacitance On-Resistance vs. Junction Temperature On-Resistance vs. Gate-to-Source Voltage 0 100 200 300 400 500 0 6 12 18 24 30 Crss Coss Ciss VDS - Drain-to-Source Voltage (V) 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 - 50 - 25 0 25 50 75 100 125 150 VGS = 10 V ID = 1.25 A TJ - Junction Temperature (°C) 0.0 0.2 0.4 0.6 0.8 1.0 0 2468 10 ID = 1.25 A VGS - Gate-to-Source Voltage (V) |
类似零件编号 - SI2309DS-T1 |
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类似说明 - SI2309DS-T1 |
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