数据搜索系统,热门电子元器件搜索 |
|
SI2306BDS-T1-GE3 数据表(PDF) 2 Page - Vishay Siliconix |
|
SI2306BDS-T1-GE3 数据表(HTML) 2 Page - Vishay Siliconix |
2 / 5 page www.vishay.com 2 Document Number: 73234 S-80642-Rev. B, 24-Mar-08 Vishay Siliconix Si2306BDS Notes: a. Pulse test: Pulse width ≤ 300 µs, duty cycle ≤ 2 %. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted SPECIFICATIONS TA = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Limits Unit Min. Typ. Max. Static Drain-Source Breakdown Voltage V(BR)DSS VGS = 0 V, ID = 250 µA 30 V Gate-Threshold Voltage VGS(th) VDS = VGS, ID = 250 µA 1.0 3.0 Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 20 V ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = 30 V, VGS = 0 V 0.5 µA VDS = 30 V, VGS = 0 V, TJ = 55 °C 10 On-State Drain Currenta ID(on) VDS ≥ 4.5 V, VGS = 10 V 6A Drain-Source On-Resistancea RDS(on) VGS = 10 V, ID = 3.5 A 0.038 0.047 Ω VGS = 4.5 V, ID = 2.8 A 0.052 0.065 Forward Transconductancea gfs VDS = 4.5 V, ID = 2.5 A 7.0 S Diode Forward Voltage VSD IS = 1.25 A, VGS = 0 V 0.8 1.2 V Dynamic Gate Charge Qg VDS = 15 V, VGS = 5 V, ID = 2.5 A 3.0 4.5 nC Total Gate Charge Qgt VDS = 15 V, VGS = 10 V, ID = 2.5 A 69 Gate-Source Charge Qgs 1.6 Gate-Drain Charge Qgd 0.6 Gate Resistance Rg f = 1.0 MHz 2.557.5 Ω Input Capacitance Ciss VDS = 15 V, VGS = 0 V, f = 1 MHz 305 pF Output Capacitance Coss 65 Reverse Transfer Capacitance Crss 29 Switching Turn-On Delay Time td(on) VDD = 15 V, RL = 15 Ω ID ≅ 1 A, VGEN = 10 V, Rg = 6 Ω 711 ns Rise Time tr 12 18 Turn-Off Delay Time td(off) 14 25 Fall Time tf 610 Reverse Recovery Time trr IF = 1.25 A, di/dt = 100 A/µs 14 21 Body Diode Reverse Recovery Charge Qrr 610 nC Output Characteristics 0 4 8 12 16 20 0 123 456 VGS = 10 thru 5 V VDS - Drain-to-Source Voltage (V) 4 V 3 V Transfer Characteristics 0 4 8 12 16 20 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 TC = 125 °C - 55 °C 25 °C VGS - Gate-to-Source Voltage (V) |
类似零件编号 - SI2306BDS-T1-GE3 |
|
类似说明 - SI2306BDS-T1-GE3 |
|
|
链接网址 |
隐私政策 |
ALLDATASHEETCN.COM |
ALLDATASHEET是否为您带来帮助? [ DONATE ] |
关于 Alldatasheet | 广告服务 | 联系我们 | 隐私政策 | 链接交换 | 制造商名单 All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |