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SI1563EDH-T1 数据表(PDF) 2 Page - Vishay Siliconix |
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SI1563EDH-T1 数据表(HTML) 2 Page - Vishay Siliconix |
2 / 9 page www.vishay.com 2 Document Number: 71416 S-80257-Rev. C, 04-Feb-08 Vishay Siliconix Si1563EDH New Product Notes: a. Pulse test; pulse width ≤ 300 µs, duty cycle ≤ 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONS TJ = 25 °C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Gate Threshold Voltage VGS(th) VDS = VGS, ID = 100 µA N-Ch 0.45 V VDS = VGS, ID = - 100 µA P-Ch - 0.45 Gate-Body Leakage IGSS VDS = 0 V, VGS = ± 4.5 V N-Ch ± 1 µA P-Ch ± 1 VDS = 0 V, VGS = ± 12 V N-Ch ± 10 mA P-Ch ± 10 Zero Gate Voltage Drain Current IDSS VDS = 16 V, VGS = 0 V N-Ch 1 µA VDS = - 16 V, VGS = 0 V P-Ch - 1 VDS = 16 V, VGS = 0 V, TJ = 85 °C N-Ch 5 VDS = - 16 V, VGS = 0 V, TJ = 85 °C P-Ch - 5 On-State Drain Currenta ID(on) VDS ≥ 5 V, VGS = 4.5 V N-Ch 2 A VDS ≤ - 5 V, VGS = - 4.5 V P-Ch - 2 Drain-Source On-State Resistancea rDS(on) VGS = 4.5 V, ID = 1.13 A N-Ch 0.220 0.280 Ω VGS = - 4.5 V, ID = - 0.88 A P-Ch 0.400 0.490 VGS = 2.5 V, ID = 0.99 A N-Ch 0.281 0.360 VGS = - 2.5 V, ID = - 0.71 A P-Ch 0.610 0.750 VGS = 1.8 V, ID = 0.20 A N-Ch 0.344 0.450 VGS = - 1.8 V, ID = - 0.20 A P-Ch 0.850 1.10 Forward Transconductancea gfs VDS = 10 V, ID = 1.13 A N-Ch 2.6 S VDS = - 10 V, ID = - 0.88 A P-Ch 1.5 Diode Forward Voltagea VSD IS = 0.48 V, VGS = 0 V N-Ch 0.8 1.2 V IS = - 0.48 V, VGS = 0 V P-Ch - 0.8 - 1.2 Dynamicb Total Gate Charge Qg N-Channel VDS = 10 V, VGS = 4.5 V, ID = 1.13 A P-Channel VDS = - 10 V, VGS = - 4.5 V, ID = - 0.88 A N-Ch 0.65 1.0 nC P-Ch 1.2 1.8 Gate-Source Charge Qgs N-Ch 0.2 P-Ch 0.3 Gate-Drain Charge Qgd N-Ch 0.23 P-Ch 0.3 Turn-On Delay Time td(on) N-Channel VDD = 10 V, RL = 20 Ω ID ≅ 0.5 A, VGEN = 4.5 V, Rg = 6 Ω P-Channel VDD = - 10 V, RL = 20 Ω ID ≅ - 0.5 A, VGEN = - 4.5 V, Rg = 6 Ω N-Ch 45 70 ns P-Ch 150 230 Rise Time tr N-Ch 85 130 P-Ch 480 720 Turn-Off Delay Time td(off) N-Ch 350 530 P-Ch 840 1200 Fall Time tf N-Ch 210 320 P-Ch 850 1200 |
类似零件编号 - SI1563EDH-T1 |
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类似说明 - SI1563EDH-T1 |
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