SI1469DH-T1-E3 datasheet(1/7 Pages) VISHAY

部件名	SI1469DH-T1-E3

功能描述	P-Channel 20-V (G-S) MOSFET

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制造商	VISHAY [Vishay Siliconix]

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Vishay Siliconix

Si1469DH

New Product

Document Number: 74441

S-70195-Rev. A, 29-Jan-07

www.vishay.com

1

P-Channel 20-V (G-S) MOSFET

FEATURES

•

TrenchFET® Power MOSFET

APPLICATIONS

•

Load Switch for Portable Devices

PRODUCT SUMMARY

VDS (V)

rDS(on) (Ω)

ID (A)

c

Qg (Typ)

- 20

0.080 at VGS = - 10 V

- 1.6

5.5 nC

0.100 at VGS = - 4.5 V

- 1.6

0.155 at VGS = - 2.5 V

- 1.6

Ordering Information: Si1469DH-T1-E3 (Lead (Pb)-free)

SOT-363

SC-70 (6-LEADS)

6

4

1

2

3

5

Top View

D

G

D

S

Marking Code

BL

XX

Lot Traceability

and Date Code

Part #

Code

S

G

D

P-Channel MOSFET

Notes:

a. Surface Mounted on 1" x 1" FR4 board.

b. t = 5 sec.

c. Package limited.

d. Maximum under Steady State conditions is 125 °C/W.

ABSOLUTE MAXIMUM RATINGS TA = 25 °C, unless otherwise noted

Parameter

Symbol

Limit

Unit

Drain-Source Voltage

VDS

- 20

V

Gate-Source Voltage

VGS

± 12

Continuous Drain Current (TJ = 150 °C)

a, b

TC = 25 °C

ID

-1.6c

A

TC = 70 °C

- 1.6c

TA = 25 °C

- 1.6a, b, c

TA = 70 °C

- 1.6a, b, c

Pulsed Drain Current (10 µs Pulse Width)

IDM

- 6.5c

Continuous Source-Drain Diode Currenta, b

TC = 25 °C

IS

- 1.6c

TA = 25 °C

- 1.6a, b, c

Maximum Power Dissipationa, b

TC = 25 °C

PD

2.78

W

TC = 70 °C

1.78

TA = 25 °C

2.5a, b

TA = 70 °C

1a, b

Operating Junction and Storage Temperature Range

TJ, Tstg

- 55 to 150

°C

Soldering Recommendations (Peak Temperature)c, d

260

THERMAL RESISTANCE RATINGS

Parameter

Symbol

Typical

Maximum

Unit

Maximum Junction-to-Ambienta, d

t

≤ 5 sec

RthJA

60

80

°C/W

Maximum Junction-to-Foot (Drain)

Steady State

RthJF

34

45

RoHS

COMPLIANT

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