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SI1305DL-T1-E3 数据表(PDF) 3 Page - Vishay Siliconix |
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SI1305DL-T1-E3 数据表(HTML) 3 Page - Vishay Siliconix |
3 / 5 page Si1305DL Vishay Siliconix Document Number: 71076 S-51075—Rev. D, 13-Jun-05 www.vishay.com 3 TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 50 100 150 200 250 300 350 02468 0.0 0.4 0.8 1.2 1.6 −50 −25 0 25 50 75 100 125 150 0 2 4 6 8 01234 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 012 34 567 VDS − Drain-to-Source Voltage (V) Crss Coss Ciss VDS = 4 V ID = 1 A ID − Drain Current (A) VGS = 4.5 V ID = 1 A VGS = 1.8 V VGS = 2.5 V Gate Charge On-Resistance vs. Drain Current Qg − Total Gate Charge (nC) Capacitance On-Resistance vs. Junction Temperature TJ − Junction Temperature (_C) 0.0 0.2 0.4 0.6 0.8 1.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 ID = 1 A 10 1 0.001 Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage VSD − Source-to-Drain Voltage (V) VGS − Gate-to-Source Voltage (V) VGS = 4.5 V 0.1 0.01 TJ = 150_C TJ = 25_C |
类似零件编号 - SI1305DL-T1-E3 |
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类似说明 - SI1305DL-T1-E3 |
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