SI1013R-T1-E3 datasheet(3/6 Pages) VISHAY

部件名	SI1013R-T1-E3

功能描述	P-Channel 1.8-V (G-S) MOSFET

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制造商	VISHAY [Vishay Siliconix]

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3 / 6 page

Document Number: 71167

S-81444-Rev. C, 23-Jun-08

www.vishay.com

3

Vishay Siliconix

Si1013R/X

TYPICAL CHARACTERISTICS

TA = 25 °C, unless otherwise noted

On-Resistance vs. Drain Current

Gate Charge

Surge-Drain Diode Forward Voltage

0.0

0.8

1.6

2.4

3.2

4.0

0

200

400

600

800

1000

ID - Drain Current (mA)

VGS = 1.8 V

VGS = 4.5 V

VGS = 2.5 V

0

1

2

3

4

5

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

VDS = 10 V

ID = 250 mA

Qg - Total Gate Charge (nC)

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1000

1

VSD - Source-to-Drain Voltage (V)

TJ = 125 °C

TJ = 25 °C

TJ = - 55 °C

10

100

Capacitance

On-Resistance vs. Junction Temperature

On-Resistance vs. Gate-to-Source Voltage

0

20

40

60

80

100

120

0

4

8

12

16

20

VDS - Drain-to-Source Voltage (V)

Crss

Coss

Ciss

0.6

0.8

1.0

1.2

1.4

1.6

- 50

- 25

0

25

50

75

100

125

VGS = 4.5 V

ID = 350 mA

TJ - Junction Temperature (°C)

VGS = 1.8 V

ID = 150 mA

0

1

2

3

4

5

0123456

ID = 350 mA

VGS - Gate-to-Source Voltage (V)

ID = 200 mA

类似零件编号 - SI1013R-T1-E3

制造商	部件名	数据表	功能描述
Vishay Siliconix	Si1013R-T1-GE3	158Kb / 8P	P-Channel 1.8 V (G-S) MOSFET Rev. D, 25-Oct-10

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