Document Number: 91121

www.vishay.com

S-Pending-Rev. A, 23-Jun-08

7

IRFBF20S, IRFBF20L, SiHFBF20S, SiHFBF20L

Vishay Siliconix

Fig. 13a - Basic Gate Charge Waveform

Fig. 13b - Gate Charge Test Circuit

Fig. 14 - For N-Channel

Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon

Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and

reliability data, see http://www.vishay.com/ppg?91121.

Q

GS

Q

GD

Q

G

Charge

10 V

D.U.T.

3 mA

V

GS

V

DS

I

G

I

D

0.3 µF

0.2 µF

50 k

Ω

12 V

Current regulator

Current sampling resistors

Same type as D.U.T.

+

-

P.W.

Period

di/dt

Diode Recovery

dv/dt

Ripple

≤ 5%

Body Diode

Forward Drop

Re-Applied

Voltage

Reverse

Recovery

Current

Body Diode Forward

Current

Driver Gate Drive

Inductor Curent

D =

P.W.

Period

+

-

+

+

+

-

-

-

Peak Diode Recovery dv/dt Test Circuit

• Driver same type as D.U.T.

• D.U.T. - Device Under Test

D.U.T

Circuit Layout Considerations

• Low Stray Inductance

• Ground Plane

• Low Leakage Inductance

Current Transformer

*