Document Number: 91118

www.vishay.com

S-81262-Rev. A, 07-Jul-08

1

Power MOSFET

IRFBE30, SiHFBE30

Vishay Siliconix

FEATURES

• Dynamic dV/dt Rating

• Repetitive Avalanche Rated

• Fast Switching

• Ease of Paralleling

• Simple Drive Requirements

• Lead (Pb)-free Available

DESCRIPTION

Third generation Power MOSFETs from Vishay provide the

designer with the best combination of fast switching,

ruggedized

device

design,

low

on-resistance

and

cost-effectiveness.

The TO-220 package is universally preferred for all

commercial-industrial applications at power dissipation

levels to approximately 50 W. The low thermal resistance

and low package cost of the TO-220 contribute to its wide

acceptance throughout the industry.

Notes

a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).

d. 1.6 mm from case.

PRODUCT SUMMARY

800

3.0

78

9.6

45

Configuration

Single

N-Channel MOSFET

G

D

S

TO-220

G

D

S

Available

RoHS*

COMPLIANT

ORDERING INFORMATION

Package

TO-220

Lead (Pb)-free

IRFBE30PbF

SiHFBE30-E3

SnPb

IRFBE30

SiHFBE30

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

800

V

Gate-Source Voltage

± 20

Continuous Drain Current

4.1

A

2.6

16

Linear Derating Factor

1.0

W/°C

260

mJ

4.1

A

13

mJ

Maximum Power Dissipation

125

W

dV/dt

2.0

V/ns

Operating Junction and Storage Temperature Range

- 55 to + 150

°C

Soldering Recommendations (Peak Temperature)

for 10 s

Mounting Torque

6-32 or M3 screw

10

lbf · in

1.1

N · m

* Pb containing terminations are not RoHS compliant, exemptions may apply