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IRF840ASTRL 数据表(PDF) 2 Page - Vishay Siliconix

部件名 IRF840ASTRL
功能描述  Power MOSFET
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制造商  VISHAY [Vishay Siliconix]
网页  http://www.vishay.com
标志 VISHAY - Vishay Siliconix

IRF840ASTRL 数据表(HTML) 2 Page - Vishay Siliconix

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Document Number: 91066
2
S-81412-Rev. A, 07-Jul-08
IRF840AS, IRF840AL, SiHF840AS, SiHF840AL
Vishay Siliconix
Note
a. When mounted on 1" square PCB (FR-4 or G-10 material).
Notes
a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11).
b. Pulse width
≤ 300 µs; duty cycle ≤ 2 %.
c. Coss eff. is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80 % VDS.
d. Uses IRF840A/SiHF840A data and test conditions
THERMAL RESISTANCE RATINGS
PARAMETER
SYMBOL
MIN.
TYP.
MAX.
UNIT
Maximum Junction-to-Ambient
(PCB Mount)a
RthJA
--
40
°C/W
Maximum Junction-to-Case (Drain)
RthJC
--
1.0
SPECIFICATIONS TJ = 25 °C, unless otherwise noted
PARAMETER
SYMBOL
TEST CONDITIONS
MIN.
TYP.
MAX.
UNIT
Static
Drain-Source Breakdown Voltage
VDS
VGS = 0 V, ID = 250 µA
500
-
-
V
VDS Temperature Coefficient
ΔV
DS/TJ
Reference to 25 °C, ID = 1 mAd
-0.58
-
V/°C
Gate-Source Threshold Voltage
VGS(th)
VDS = VGS, ID = 250 µA
2.0
-
4.0
V
Gate-Source Leakage
IGSS
VGS = ± 30 V
-
-
± 100
nA
Zero Gate Voltage Drain Current
IDSS
VDS = 500 V, VGS = 0 V
-
-
25
µA
VDS = 400 V, VGS = 0 V, TJ = 125 °C
-
-
250
Drain-Source On-State Resistance
RDS(on)
VGS = 10 V
ID = 4.8 Ab
-
-
0.85
Ω
Forward Transconductance
gfs
VDS = 50 V, ID = 4.8 A
3.7
-
-
S
Dynamic
Input Capacitance
Ciss
VGS = 0 V,
VDS = 25 V,
f = 1.0 MHz, see fig. 5
-
1018
-
pF
Output Capacitance
Coss
-
155
-
Reverse Transfer Capacitance
Crss
-8.0
-
Output Capacitance
Coss
VGS = 0 V
VDS = 1.0 V, f = 1.0 MHz
1490
Output Capacitance
Coss
VDS = 400 V, f = 1.0 MHz
42
Effective Output Capacitance
Coss eff.
VDS = 0 V to 480 Vc, d
56
Total Gate Charge
Qg
VGS = 10 V
ID = 8.0 A, VDS = 400 V,
see fig. 6 and 13b, d
--
38
nC
Gate-Source Charge
Qgs
--
9.0
Gate-Drain Charge
Qgd
--
18
Turn-On Delay Time
td(on)
VDD = 250 V, ID = 8.0 A,
RG = 9.1 Ω, RD = 31 Ω, see fig. 10b, d
-11
-
ns
Rise Time
tr
-23
-
Turn-Off Delay Time
td(off)
-26
-
Fall Time
tf
-19
-
Drain-Source Body Diode Characteristics
Continuous Source-Drain Diode Current
IS
MOSFET symbol
showing the
integral reverse
p - n junction diode
--
8.0
A
Pulsed Diode Forward Currenta
ISM
--
32
Body Diode Voltage
VSD
TJ = 25 °C, IS = 8.0 A, VGS = 0 Vb
--
2.0
V
Body Diode Reverse Recovery Time
trr
TJ = 25 °C, IF = 8.0 A, dI/dt = 100 A/µsb
-
422
633
ns
Body Diode Reverse Recovery Charge
Qrr
-2.0
3.0
µC
Forward Turn-On Time
ton
Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD)
S
D
G


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