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STK820 数据表(PDF) 3 Page - STMicroelectronics |
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STK820 数据表(HTML) 3 Page - STMicroelectronics |
3 / 15 page STK820 Electrical ratings 3/15 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit VDS Drain-source voltage (VGS = 0) 25 V VGS (1) 1. Continuous mode Gate-source voltage ± 16 V VGS (2) 2. Guaranteed for test time ≤ 15 ms Gate-source voltage ± 18 V ID (4) Drain current (continuous) at TA = 25 °C 21 A ID (4) Drain current (continuous) at TA = 100 °C 13 A IDM (3) 3. Pulse width limited by package Drain current (pulsed) 84 A PTOT (4) 4. When mounted on FR-4 board of 1inch2 , 2 oz Cu and ≤10 sec Total dissipation at TA = 25 °C 5.2 W Derating factor 0.0416 W/°C EAS (5) 5. Starting Tj = 25 °C, ID = 11 A, VDD = 25 V Single pulse avalanche energy 600 mJ Tstg Storage temperature -55 to 150 °C Tj Max. operating junction temperature 150 °C Table 3. Thermal data Symbol Parameter Typ. Max. Unit Rthj-amb (1) 1. When mounted on FR-4 board of 1inch2 , 2 oz Cu and ≤ 10 sec Thermal resistance junction-amb 20 24 °C/W Rthj-c (2) 2. Steady state Thermal resistance junction-case (top drain) 1 1.2 °C/W Rthj-c (3) 3. Measured at source pin when the device is mounted on FR-4 board in steady state Thermal resistance junction-case (source) 2.8 3.4 °C/W |
类似零件编号 - STK820 |
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类似说明 - STK820 |
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