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STK40N2LLH5 数据表(PDF) 4 Page - STMicroelectronics |
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STK40N2LLH5 数据表(HTML) 4 Page - STMicroelectronics |
4 / 13 page Electrical characteristics STK40N2LLH5 4/13 2 Electrical characteristics (TCASE=25°C unless otherwise specified) Table 4. On/off Symbol Parameter Test conditions Min. Typ. Max. Unit V(BR)DSS Drain-source breakdown voltage ID = 250 µA, VGS= 0 25 V IDSS Zero gate voltage drain current (VGS = 0) VDS = Max rating, VDS = Max rating,Tc=125°C 1 10 µA µA IGSS Gate body leakage current (VDS = 0) VGS = ± 20 V ± 100 nA VGS(th) Gate threshold voltage VDS= VGS, ID = 250 µA 12.5 V RDS(on) Static drain-source on resistance VGS= 10 V, ID= 20 A VGS= 4.5 V, ID= 20A 0.0014 0.0018 0.0017 0.0022 Ω Ω Table 5. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit Ciss Coss Crss Input capacitance Output capacitance Reverse transfer capacitance VDS =25 V, f=1 MHz, VGS=0 4617 1065 170 pF pF pF Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VDD=15 V, ID = 40 A VGS =4.5 V (see Figure 3) 34 TBD TBD nC nC nC RG Gate input resistance f=1 MHz Gate DC Bias = 0 Test signal level = 20 mV open drain TBD Ω |
类似零件编号 - STK40N2LLH5 |
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类似说明 - STK40N2LLH5 |
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