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STD90N02L 数据表(PDF) 5 Page - STMicroelectronics |
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STD90N02L 数据表(HTML) 5 Page - STMicroelectronics |
5 / 17 page STD90N02L - STD90N02L-1 Electrical characteristics 5/17 Table 6. Switching times Symbol Parameter Test conditions Min. Typ. Max Unit td(on) tr td(off) tf Turn-on delay time Rise time Turn-off delay time Fall time VDD=10V, ID=30A, RG=4.7Ω, VGS=5V (see Figure 16) 12 110 18 8 ns ns ns ns Table 7. Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit ISD ISDM Source-drain current Source-drain current (pulsed) 60 240 A A VSD (1) 1. Pulsed: pulse duration = 300µs, duty cycle 1.5% Forward on voltage ISD=30A, VGS=0 1.3 V trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD=60A, di/dt = 100A/µs, VDD=15V, Tj=150°C (see Figure 18) 36 65 3.6 ns nC A |
类似零件编号 - STD90N02L |
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类似说明 - STD90N02L |
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