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STD22NM20N 数据表(PDF) 1 Page - STMicroelectronics |
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STD22NM20N 数据表(HTML) 1 Page - STMicroelectronics |
1 / 10 page 1/10 November 2005 STD22NM20N N-CHANNEL 200V - 0.088 Ω - 22A DPAK ULTRA LOW GATE CHARGE MDmesh™ II MOSFET Table 1: General Features ■ WORLDWIDE LOWEST GATE CHARGE ■ TYPICAL RDS(on) = 0.088 Ω ■ HIGH dv/dt and AVALANCHE CAPABILITIES ■ LOW INPUT CAPACITANCE ■ LOW GATE RESISTANCE DESCRIPTION This 200V MOSFET with a new advanced layout brings all unique advantages of MDmesh technol- ogy to lower voltages. The device exhibits world- wide lowest gate charge for any given on- resistance. Its use is therefore ideal as primary switch in isolated DC-DC converters for Telecom and Computer applications. Used in combination with secondary-side low-voltage STripFET™ products, it contributes to reducting losses and boosting effeciency. APPLICATIONS The MDmesh™ family is very suitable for increas- ing power density allowing system miniaturization and higher efficiencies Table 2: Order Codes Figure 1: Package Figure 2: Internal Schematic Diagram TYPE VDSS RDS(on) ID STD22NM20N 200 V < 0.105 Ω 22 A 1 3 DPAK SALES TYPE MARKING PACKAGE PACKAGING STD22NM20NT4 D22NM20N DPAK TAPE & REEL Rev. 5 |
类似零件编号 - STD22NM20N |
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类似说明 - STD22NM20N |
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