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STD4LNK60Z 数据表(PDF) 4 Page - STMicroelectronics |
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STD4LNK60Z 数据表(HTML) 4 Page - STMicroelectronics |
4 / 11 page Electrical characteristics STD4LNK60Z - STF4LNK60Z 4/11 2 Electrical characteristics (TCASE=25 °C unless otherwise specified) Table 5. On/off states Symbol Parameter Test conditions Min. Typ. Max. Unit V(BR)DSS Drain-source breakdown voltage ID = 1 mA, VGS= 0 600 V IDSS Zero gate voltage drain current (VGS = 0) VDS = Max rating, VDS = Max rating,Tc=125 °C 1 50 µA µA IGSS Gate body leakage current (VDS = 0) VGS = ± 30 V ± 100 nA VGS(th) Gate threshold voltage VDS= VGS, ID = 50 µA 23 4 V RDS(on) Static drain-source on resistance VGS= 10 V, ID= 2.7 A 2.2 2.7 Ω Table 6. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit Ciss Coss Crss Input capacitance Output capacitance Reverse transfer capacitance VDS =25 V, f=1 MHz, VGS=0 400 50 10 pF pF pF Coss eq. Equivalent output capacitance VDS = 0 to 480 V, VGS =0 44.4 pF Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VDD= 480 V, ID = 3.3 A VGS = 10 V (see Figure 3) 14 TBD TBD nC nC nC Table 7. Switching times Symbol Parameter Test conditions Min. Typ. Max. Unit td(on) tr Turn-on delay time Rise time VDD= 300 V, ID= 3.3 A, RG=4.7 Ω, VGS=10 V (see Figure 2) 7.5 19.5 ns ns td(off) tf Turn-off delay time Fall time VDD=300 V, ID= 3.3 A, RG=4.7 Ω, VGS= 10 V (see Figure 2) 28 24 ns ns |
类似零件编号 - STD4LNK60Z |
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类似说明 - STD4LNK60Z |
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