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STB13005-1 数据表(PDF) 1 Page - STMicroelectronics |
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STB13005-1 数据表(HTML) 1 Page - STMicroelectronics |
1 / 11 page October 2007 Rev 1 1/11 11 STB13005 High voltage fast-switching NPN power transistor Features ■ Low spread of dynamic parameters ■ Minimum lot-to-lot spread for reliable operation ■ Very high switching speed ■ Through hole TO-262 (I2PAK) power package in tube (suffix “-1”) Applications ■ Electronic ballast for fluorescent lighting ■ Switch mode power supplies Description The device is manufactured using high voltage multi-epitaxial planar technology for high switching speeds and medium voltage capability. It uses a cellular emitter structure with planar edge termination to enhance switching speeds while maintaining the wide RBSOA. Figure 1. Internal schematic diagram I2PAK 1 2 3 Table 1. Device summary Order code Marking (1) Package Packaging STB13005-1 B13005A I2PAK Tube B13005B 1. Product is pre-selected in DC current gain (group A and group B). STMicroelectronics reserves the right to ship either groups according to production availability. Please contact your nearest STMicroelectronics sales office for delivery details. www.st.com |
类似零件编号 - STB13005-1 |
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类似说明 - STB13005-1 |
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