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1N4148WS-V-GS18 数据表(PDF) 2 Page - Vishay Siliconix |
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1N4148WS-V-GS18 数据表(HTML) 2 Page - Vishay Siliconix |
2 / 6 page www.vishay.com 2 Document Number 85751 Rev. 1.7, 14-Sep-07 1N4148WS-V Vishay Semiconductors Thermal Characteristics Tamb = 25 °C, unless otherwise specified Note: 1) Valid provided that electrodes are kept at ambient temperature. Electrical Characteristics Tamb = 25 °C, unless otherwise specified Rectification Efficiency Measurement Circuit Parameter Test condition Symbol Value Unit Thermal resistance junction to ambient air RthJA 6501) K/W Junction temperature Tj 150 °C Storage temperature Tstg - 65 to + 150 °C Parameter Test condition Symbol Min Typ. Max Unit Forward voltage IF = 10 mA VF 1000 mV IF = 100 mA VF 1200 mV Leakage current VR = 20 V IR 25 nA VR = 75 V IR 5µA VR = 100 V IR 100 µA VR = 20 V, Tj = 150 °C IR 50 µA Diode capacitance VF = VR = 0 V CD 4pF Voltage rise when switching ON (tested with 50 mA pulses) tested with 50 mA pulses, tp = 0.1 µs, rise time < 30 ns, fp = (5 to 100) kHz Vfr 2.5 V Reverse recovery time IF = 10 mA, IR = 1 mA, VR = 6 V, RL = 100 Ω trr 4ns Rectification efficiency f = 100 MHz, VRF = 2 V ην 0.45 17436 60 Ω 5 k Ω 2 nF V O V RF = 2 V |
类似零件编号 - 1N4148WS-V-GS18 |
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类似说明 - 1N4148WS-V-GS18 |
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