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STU7NB90 数据表(PDF) 3 Page - STMicroelectronics |
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STU7NB90 数据表(HTML) 3 Page - STMicroelectronics |
3 / 9 page 3/9 STU7NB90 - STU7NB90I ELECTRICAL CHARACTERISTICS (CONTINUED) SWITCHING ON SWITCHING OFF SOURCE DRAIN DIODE Note: 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %. 2. Pulse width limited by safe operating area. Symbol Parameter Test Conditions Min. Typ. Max. Unit td(on) Turn-on Delay Time VDD = 450 V, ID = 3.5 A RG = 4.7Ω VGS = 10 V (see test circuit, Figure 3) 25 ns tr Rise Time 12 ns Qg Total Gate Charge VDD = 720V, ID = 7.4A, VGS = 10V 51 72 nC Qgs Gate-Source Charge 12.5 nC Qgd Gate-Drain Charge 23.5 nC Symbol Parameter Test Conditions Min. Typ. Max. Unit tr(Voff) Off-voltage Rise Time VDD = 720V, ID = 7.4 A, RG =4.7Ω, VGS = 10V (see test circuit, Figure 5) 22 ns tf Fall Time 15 ns tc Cross-over Time 31 ns Symbol Parameter Test Conditions Min. Typ. Max. Unit ISD Source-drain Current 7.3 A ISDM (2) Source-drain Current (pulsed) 29.2 A VSD (1) Forward On Voltage ISD = 7.3 A, VGS = 0 1.6 V trr Reverse Recovery Time ISD = 7.4 A, di/dt = 100A/µs, VDD = 100V, Tj = 150°C (see test circuit, Figure 5) 700 ns Qrr Reverse Recovery Charge 6.3 µC IRRM Reverse Recovery Current 18 A Safe Operating Area for Max220I Safe Operating Area for Max220 |
类似零件编号 - STU7NB90 |
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类似说明 - STU7NB90 |
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