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STU36NB20 数据表(PDF) 1 Page - STMicroelectronics |
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STU36NB20 数据表(HTML) 1 Page - STMicroelectronics |
1 / 6 page STU36NB20 N-CHANNEL ENHANCEMENT MODE PowerMESH ™ MOSFET PRELIMINARY DATA s TYPICAL RDS(on) = 0.052 Ω s EXTREMELY HIGH dv/dt CAPABILITY s 100% AVALANCHE TESTED s VERY LOW INTRINSIC CAPACITANCES s GATE CHARGE MINIMIZED s ± 30V GATE TO SOURCE VOLTAGE RATING DESCRIPTION Using the latest high voltage MESH OVERLAY ™ process, SGS-Thomson has designed an advanced family of power MOSFETs with outstanding performances. The new patent pending strip layout coupled with the Company’s proprietary edge termination structure, gives the lowest RDS(on) per area, exceptional avalanche and dv/dt capabilities and unrivalled gate charge and switching characteristics. APPLICATIONS s SWITCH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Uni t VDS Drain-source Volt age (VGS =0) 200 V VDGR Drain- gate Voltage (RGS =20 k Ω) 200 V VGS Gat e-source Voltage ± 30 V ID Drain Current (continuous) at Tc =25 o C36 A ID Drain Current (continuous) at Tc =100 oC23 A IDM( •) Drain Current (pulsed) 144 A Ptot Tot al Dissipation at Tc =25 oC160 W Derating F act or 1.28 W/ oC dv/dt(1) Peak Diode Recovery voltage slope 5.5 V/ ns Tstg Storage T emperat ure -65 to 150 oC Tj Max. O perating Junction Temperature 150 oC ( •) Pulse width limited by safe operating area (1)ISD ≤36A, di/dt ≤ 200 A/µs, VDD ≤ V(BR)DSS,Tj ≤ TJMAX January 1998 TYPE VDSS RDS(on) ID STU36NB20 200 V < 0.065 Ω 36 A 1 2 3 Max220 1/6 |
类似零件编号 - STU36NB20 |
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类似说明 - STU36NB20 |
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