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2SJ517YYTL-E 数据表(PDF) 3 Page - Renesas Technology Corp |
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2SJ517YYTL-E 数据表(HTML) 3 Page - Renesas Technology Corp |
3 / 7 page 2SJ517 Rev.4.00 Sep 07, 2005 page 3 of 6 Main Characteristics 2.0 0.5 0 1.0 1.5 0 50 100 150 200 Ambient Temperature Ta (°C) Power vs. Temperature Derating Test Condition: When using the aluminum ceramic board (12.5 × 20 × 70 mm) Drain to Source Voltage VDS (V) Maximum Safe Operation Area –0.1 –10 –1 –0.1 –0.01 –0.3 –1 –3 –10 –30 –100 –3 –0.3 –0.03 Operation in this area is limited by RDS (on) Ta = 25°C PW = 10 ms (1 shot) –5 –4 –3 0 –1 –2 0 Drain to Source Voltage VDS (V) Typical Output Characteristics –3 V Pulse Test –2.5 V –2 –4 –6 –8 –10 –5 0 –1 –2 –3 –4 0 Gate to Source Voltage VGS (V) Typical Transfer Characteristics –1 –2 –3 –4 –5 Tc = 75°C –25°C 25°C VDS = –10 V Pulse Test –1.0 0 –0.2 –0.4 –0.6 –0.8 0 Gate to Source Voltage VGS (V) Drain to Source Saturation Voltage vs. Gate to Source Voltage –2 –4 –6 –8 –10 Pulse Test ID = –2 A –0.5 A –1 A Drain Current ID (A) Static Drain to Source on State Resistance vs. Drain Current 1 0.2 0.5 0.05 0.1 0.01 0.02 –10 –4 V VGS = –2.5 V Pulse Test –0.1 –0.2 –0.5 –1 –2 –5 DC Operation 1 ms VGS = –1.5 V –10 V –2 V –4 V |
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