数据搜索系统,热门电子元器件搜索 |
|
2SJ387 数据表(PDF) 4 Page - Renesas Technology Corp |
|
2SJ387 数据表(HTML) 4 Page - Renesas Technology Corp |
4 / 8 page 2SJ387(L), 2SJ387(S) Rev.2.00 Sep 07, 2005 page 4 of 7 0.20 –40 0 40 80 120 160 Case Temperature Tc (°C) 0 0.04 0.08 0.12 0.16 Static Drain to Source on State Resistance vs. Temperature Pulse Test ID = –5 A ID = –10 A Forward Transfer Admittance vs. Drain Current Drain Current ID (A) 50 20 5 10 1 2 0.5 –0.1 –0.2 –0.5 –1 –5 –2 –10 Tc = –25°C 75°C VDS = –10 V Pulse Test 25°C Reverse Drain Current IDR (A) Body-Drain Diode Reverse Recovery Time –0.1 –0.3 –1 –3 –10 –30 –100 1000 500 200 50 100 20 10 di / dt = 20 A / µs VGS = 0, Ta = 25°C 0 –10 –20 –30 –40 –50 Drain to Source Voltage VDS (V) Typical Capacitance vs. Drain to Source Voltage 10000 5000 2000 1000 500 200 100 Ciss Coss Crss VGS = 0 f = 1 MHz 0 0 Gate Charge Qg (nc) 0 –20 –16 –12 –8 –4 –50 –40 –30 –20 –10 Dynamic Input Characteristics 20 40 60 80 100 VDS VGS 1000 500 200 50 100 20 10 –0.3 –3 –1 –10 –30 –100 –0.1 tf tr td(off) td(on) Drain Current ID (A) Switching Characteristics VDD = –5 V –10 V –15 V VDD = –5 V –10 V –15 V –4 V VGS = –2.5 V –1 A, –2 A –1 A –2 A –5 A VGS = –4 V, VDD = –10 V PW = 5 µs, duty ≤ 1 % |
类似零件编号 - 2SJ387 |
|
类似说明 - 2SJ387 |
|
|
链接网址 |
隐私政策 |
ALLDATASHEETCN.COM |
ALLDATASHEET是否为您带来帮助? [ DONATE ] |
关于 Alldatasheet | 广告服务 | 联系我们 | 隐私政策 | 链接交换 | 制造商名单 All Rights Reserved©Alldatasheet.com |
Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
Family Site : ic2ic.com |
icmetro.com |