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2SJ244JYTR-E 数据表(PDF) 3 Page - Renesas Technology Corp

部件名 2SJ244JYTR-E
功能描述  Silicon P Channel MOS FET
Download  7 Pages
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制造商  RENESAS [Renesas Technology Corp]
网页  http://www.renesas.com
标志 RENESAS - Renesas Technology Corp

2SJ244JYTR-E 数据表(HTML) 3 Page - Renesas Technology Corp

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2SJ244
Rev.2.00 Sep 07, 2005 page 3 of 6
Main Characteristics
Ambient Temperature
Ta (°C)
Maximum Channel Power Dissipation Curve
Drain to Source Voltage
VDS (V)
Typical Output Characteristics
Gate to Source Voltage
VGS (V)
Typical Forward Transfer Characteristics
–5
0
–1
–2
–3
–4
0–2
–4
–6
–8
–10
–5
0
–1
–2
–3
–4
0
–1–2–3–4–5
Tc = –25°C
25°C
75°C
2.0
0
0.5
1.0
1.5
0
50
100
150
200
VDS = –5 V
Pulse Test
–5 V
–2.5 V
–3.5 V
–4.5 V
–2 V
–3 V
–4 V
VGS = –1.5 V
Pulse Test
Drain to Source Voltage
VDS (V)
Maximum Safe Operation Area
–3
–1
–0.3
–0.1
–0.03
–0.01
–0.1
–0.3
–1
–3
–10
–30
–100
–10
PW = 1 ms (1 shot)
Operation in
this area is
limited by RDS (on)
Drain Current
ID (A)
Drain to Source on State Resistance
vs. Drain Current
2
1
0.2
0.5
0.1
–0.5
–2
–5
–0.1
–1
10
–0.2
10
5
VGS = –4 V
–2 V
–3 V
Pulse Test
(on the alumina ceramic board)
Forward Transfer Admittance vs.
Drain Current
Drain Current ID (A)
20
10
2
5
1
0.2
0.5
–0.1 –0.2
–0.5
–1
–2
–5
–10
Tc = –25°C
75°C
VDS = –5 V
Pulse Test
25°C


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