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STB300NH02L_0709 数据表(PDF) 5 Page - STMicroelectronics |
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STB300NH02L_0709 数据表(HTML) 5 Page - STMicroelectronics |
5 / 14 page STB300NH02L - STP300NH02L Electrical characteristics 5/14 Table 7. Switching times Symbol Parameter Test conditions Min. Typ. Max. Unit td(on) tr Turn-on delay time Rise time VDD = 10V, ID = 60A RG= 4.7Ω, VGS= 10V, (see Figure 13) 18 275 ns ns td(off) tf Turn-off delay time Fall time VDD = 10V, ID = 60A RG= 4.7Ω, VGS= 10V, (see Figure 13) 138 94.4 ns ns Table 8. Source drain diode Symbol Parameter Test conditions Min Typ. Max Unit ISD ISD Source-drain current Source-drain current (pulsed) 120 640 A A VSD (1) 1. Pulsed: pulse duration = 300µs, duty cycle 1.5% Forward on voltage ISD = 120 A, VGS = 0 1.3 V trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD = 120A, VDD = 20V, di/dt = 100A/µs Tj = 25°C (see Figure 18) 63 85 2.7 ns nC A trr Qrr IRRM Reverse recovery time Reverse recovery charge Reverse recovery current ISD =120A, VDD = 20V di/dt = 100A/µs Tj = 150°C (see Figure 18) 63.2 88 2.8 ns nC A |
类似零件编号 - STB300NH02L_0709 |
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类似说明 - STB300NH02L_0709 |
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