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STB180N10F3 数据表(PDF) 4 Page - STMicroelectronics |
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STB180N10F3 数据表(HTML) 4 Page - STMicroelectronics |
4 / 12 page Electrical characteristics STB180N10F3 - STP180N10F3 4/12 2 Electrical characteristics (TCASE=25°C unless otherwise specified) Table 4. On/off states Symbol Parameter Test conditions Min. Typ. Max. Unit V(BR)DSS Drain-source breakdown voltage ID = 250 µA, VGS= 0 100 V IDSS Zero gate voltage drain current (VGS = 0) VDS= max rating, VDS= max rating,@125°C 10 100 µA µA IGSS Gate body leakage current (VDS = 0) VGS = ±20 V ± 200 nA VGS(th) Gate threshold voltage VDS= VGS, ID = 250 µA 2 4 V RDS(on) Static drain-source on resistance VGS= 10 V, ID= 60 A D²PAK TO-220 4.5 4.8 m Ω m Ω Table 5. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit gfs (1) 1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%. Forward transconductance VDS = 15 V , ID = 60 A TBD S Ciss Coss Crss Input capacitance Output capacitance Reverse transfer capacitance VDS = 25 V, f = 1 MHz, VGS = 0 TBD TBD TBD pF pF pF Qg Qgs Qgd Total gate charge Gate-source charge Gate-drain charge VDD = 44 V, ID = 120 A, VGS = 10 V (see Figure 3) 100 TBD C TBD nC nC nC Table 6. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit td(on) tr td(off) tf Turn-on delay time Rise time Turn-off delay time Fall time VDD = 27.5 V, ID = 60 A RG =4.7 Ω VGS = 10 V (see Figure 2, Figure 7) TBD TBD TBD TBD ns ns ns ns |
类似零件编号 - STB180N10F3 |
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类似说明 - STB180N10F3 |
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