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2SK3446 数据表(PDF) 4 Page - Renesas Technology Corp |
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2SK3446 数据表(HTML) 4 Page - Renesas Technology Corp |
4 / 7 page 2SK3446 Rev.8.00 Sep 07, 2005 page 4 of 6 5 1 2 3 4 –25 0 25 75 50 100 125 150 0 0.01 0.03 0.3 1 3 10 10 3 1 0.3 0.03 0.1 0.01 0.1 25°C Tc = –25°C 75°C 0.5 A 0.2 A 0.5 A 0.2 A ID = 1 A ID = 1 A Drain Current ID (A) Forward Transfer Admittance vs. Drain Current VDS = 10 V Pulse Test Case Temperature Tc (°C) Static Drain to Source on State Resistance vs. Temperature Pulse Test 0.1 0.3 1 3 10 1000 100 300 30 3 10 1 0 10203040 50 1000 300 30 100 160 120 80 40 0 0 8 24 6 8 10 0 2 6 4 100 30 1 3 10 0.1 0.3 1 3 10 10 1 3 VGS = 0 f = 1 MHz Ciss Coss Crss ID = 1 A VDS VGS VDD = 100 V 50 V 25 V di / dt = 100 A / µs VGS = 0, Ta = 25°C tr td(on) td(off) tf VGS = 4 V, VDD = 30 V PW = 5 µs, duty ≤ 1 % Reverse Drain Current IDR (A) Body-Drain Diode Reverse Recovery Time Typical Capacitance vs. Drain to Source Voltage Drain to Source Voltage VDS (V) Drain Current ID (A) Switching Characteristics Gate Charge Qg (nC) Dynamic Input Characteristics VDD = 100 V 50 V 25 V 4 V VGS = 2.5 V |
类似零件编号 - 2SK3446_05 |
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类似说明 - 2SK3446_05 |
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