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2SK2408-E 数据表(PDF) 4 Page - Renesas Technology Corp |
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2SK2408-E 数据表(HTML) 4 Page - Renesas Technology Corp |
4 / 7 page 2SK2408 Rev.3.00 Apr 27, 2006 page 4 of 6 2.0 40 160 Case Temperature TC (°C) 1.6 0.4 0 80 120 0 0.8 1.2 Static Drain to Source on State Resistance vs. Temperature –40 VGS = 10 V Pulse Test ID = 10 A 2, 5 A 50 0.2 10 Drain Current ID (A) 10 1 0.5 5 5 2 0.1 1 Forward Transfer Admittance vs. Drain Current 20 VDS = 20 V 25 °C TC = –25°C 75 °C 0.5 Pulse Test 2 5,000 0.5 10 Reverse Drain Current IDR (A) 2,000 100 15 0.2 500 1,000 50 2 Body to Drain Diode Reverse Recovery Time di/dt = 100 A/ µs, Ta = 25°C VGS = 0 Pulse Test 200 20 1,000 20 50 Drain to Source Voltage VDS (V) 10 30 40 Typical Capacitance vs. Drain to Source Voltage 0 100 VGS = 0 f = 1 MHz Crss Coss Ciss 5,000 5 10 500 16 40 Dynamic Input Characteristics 400 100 824 32 200 300 20 16 4 0 8 12 0 VGS VDS VDD = 400 V 250 V 100 V ID = 7 A Gate Charge Qg (nc) 250 V 400 V VDD = 100 V 500 Drain Current ID (A) 200 5 50 100 10 Switching Characteristics td(off) 0.5 0.2 1 tf tr td(on) 20 VGS = 10 V VDD = 30 V PW = 2 µs, duty < 1% 210 520 • • |
类似零件编号 - 2SK2408-E |
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类似说明 - 2SK2408-E |
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