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2SK2220 数据表(PDF) 2 Page - Renesas Technology Corp |
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2SK2220 数据表(HTML) 2 Page - Renesas Technology Corp |
2 / 6 page 2SK2220, 2SK2221 Rev.2.00 Sep 07, 2005 page 2 of 5 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit 2SK2220 180 Drain to source voltage 2SK2221 VDSX 200 V Gate to source voltage VGSS ±20 V Drain current ID 8 A Body to drain diode reverse drain current IDR 8 A Channel dissipation Pch* 1 100 W Channel temperature Tch 150 °C Storage temperature Tstg –55 to +150 °C Note: 1. Value at Tc = 25 °C Electrical Characteristics (Ta = 25°C) Item Symbol Min Typ Max Unit Test conditions 2SK2220 180 — — Drain to source breakdown voltage 2SK2221 V(BR)DSX 200 — — V ID = 10 mA, VGS = –10 V Gate to source breakdown voltage V(BR)GSS ±20 — — V IG = ±100 µA, VDS = 0 Gate to source cutoff voltage VGS(off) 0.15 — 1.45 V ID = 100 mA, VDS = 10 V Drain to source saturation voltage VDS(sat) — — 12 V ID = 8 A, VGD = 0 V* 2 Forward transfer admittance |yfs| 0.7 1.0 1.4 S ID = 3 A, VDS = 10 V* 2 Input capacitance Ciss — 600 — pF Output capacitance Coss — 800 — pF Reverse transfer capacitance Crss — 8 — pF VGS = –5 V, VDS = 10 V, f = 1 MHz Turn-on time ton — 250 — ns Turn-off time toff — 90 — ns VDD = 30 V, ID = 4 A Note: 2. Pulse Test |
类似零件编号 - 2SK2220 |
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类似说明 - 2SK2220 |
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