2SK1934 datasheet(4/7 Pages) RENESAS

部件名	2SK1934

功能描述	Silicon N Channel MOS FET

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制造商	RENESAS [Renesas Technology Corp]

网页	http://www.renesas.com

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4 / 7 page

2SK1934

Rev.2.00 Sep 07, 2005 page 4 of 6

Case Temperature TC (°C)

Static Drain to Source on State

Resistance vs. Temperature

Forward Transfer Admittance

vs. Drain Current

Drain Current ID (A)

Body to Drain Diode Reverse

Recovery Time

Reverse Drain Current IDR (A)

Typical Capacitance

vs. Drain to Source Voltage

Drain to Source Voltage VDS (V)

Dynamic Input Characteristics

Gate Charge Qg (nc)

Switching Characteristics

Drain Current ID (A)

5

4

3

2

1

–40

0

40

80

120

160

Pulse Test

I = 5 A

D

0

2 A

1 A

50

20

10

5

2

1

0.5

0.1

0.2

0.5

1

5

10

2

Tc = 25

°C

–25

°C

Pulse Test

V

= 20 V

DS

75

°C

0.2

0.5

1

2

5

10

20

100

200

500

1000

2000

5000

di/dt = 100 A/ s, V

= 0

Ta = 25

°C

µ

GS

50

10000

1000

100

10

0

10

20

30

40

50

Ciss

Coss

Crss

V

= 0 V

f = 1 MHz

GS

1000

800

600

400

200

0

40

80

120

160

200

20

16

12

8

4

0

V

= 250 V

400 V

600 V

DD

400 V

600 V

V

= 250 V

DD

V

I = 8 A

GS

D

VDS

0.1

0.2

0.5

1

2

5

10

5

10

20

50

100

200

500

f

t

r

td(off)

td(on)

VGS = 10 V, VDD = 30 V

PW = 5

µs, duty ≤ 1 %

类似零件编号 - 2SK1934

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